NTMS4920NR2G
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onsemi NTMS4920NR2G

Manufacturer No:
NTMS4920NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.6A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4920NR2G is a power N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in an SO-8 case and is Pb-free, halogen-free, and RoHS compliant. It features low on-resistance (RDS(on)) and low capacitance, making it ideal for minimizing conduction and driver losses. The MOSFET is optimized for various power management tasks, including DC-DC converters, point-of-load applications, power load switches, and motor controls.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID14.1A
Continuous Drain Current (TA = 70°C)ID11.3A
Pulsed Drain Current (tp = 10 μs)IDM136A
Power Dissipation (TA = 25°C)PD1.46W
Operating Junction and Storage TemperatureTJ, Tstg−55 to 150°C
Source Current (Body Diode)IS2.1A
Drain-to-Source On Resistance (VGS = 10 V, ID = 7.5 A)RDS(on)3.6 - 4.3
Gate Threshold VoltageVGS(TH)1.0 - 2.5V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a pulsed drain current of up to 136 A
  • Low forward diode voltage and fast reverse recovery time
  • High thermal performance with a junction-to-ambient thermal resistance of 85.5 °C/W

Applications

  • DC-DC converters
  • Point-of-load applications
  • Power load switches
  • Motor controls

Q & A

  1. What is the maximum drain-to-source voltage of the NTMS4920NR2G?
    The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current at 25°C and 70°C?
    The continuous drain current is 14.1 A at 25°C and 11.3 A at 70°C.
  3. What is the pulsed drain current for a pulse width of 10 μs?
    The pulsed drain current is up to 136 A.
  4. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is −55 to 150 °C.
  5. What is the typical on-resistance at VGS = 10 V and ID = 7.5 A?
    The typical on-resistance is 3.6 - 4.3 mΩ.
  6. Is the NTMS4920NR2G Pb-free and RoHS compliant?
    Yes, the NTMS4920NR2G is Pb-free, halogen-free, and RoHS compliant.
  7. What are the typical applications of the NTMS4920NR2G?
    The typical applications include DC-DC converters, point-of-load applications, power load switches, and motor controls.
  8. What is the gate threshold voltage range?
    The gate threshold voltage range is 1.0 - 2.5 V.
  9. What is the junction-to-ambient thermal resistance?
    The junction-to-ambient thermal resistance is 85.5 °C/W.
  10. What is the forward diode voltage at 25°C?
    The forward diode voltage at 25°C is 0.7 - 1.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4068 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):820mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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