NTMS4107NR2G
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onsemi NTMS4107NR2G

Manufacturer No:
NTMS4107NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4107NR2G is a power MOSFET produced by onsemi, designed for high-performance applications requiring efficient power management. This single N-channel MOSFET is packaged in an SO-8 (Small Outline 8-pin) package, which is lead-free and suitable for a variety of power switching and amplification tasks. The device is known for its robust electrical characteristics and thermal performance, making it a reliable choice for various industrial and consumer electronics.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)30V
ID (Continuous Drain Current)18A
RDS(ON) (On-Resistance)10 mΩ (typical at VGS = 10 V)
VGS(th) (Gate Threshold Voltage)1.5 - 3.5V
RθJA (Junction-to-Ambient Thermal Resistance)75°C/W
PackageSO-8 (Pb-Free)

Key Features

  • High current capability of up to 18 A
  • Low on-resistance (RDS(ON)) of 10 mΩ (typical at VGS = 10 V)
  • High voltage rating of 30 V
  • Lead-free SO-8 package for environmental compliance
  • Robust thermal performance with a junction-to-ambient thermal resistance of 75 °C/W

Applications

The NTMS4107NR2G is suitable for a wide range of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and power amplification
  • Industrial control systems
  • Consumer electronics requiring high power efficiency

Q & A

  1. What is the maximum drain-source voltage of the NTMS4107NR2G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTMS4107NR2G?
    The continuous drain current (ID) is 18 A.
  3. What is the typical on-resistance of the NTMS4107NR2G?
    The typical on-resistance (RDS(ON)) is 10 mΩ at VGS = 10 V.
  4. What is the package type of the NTMS4107NR2G?
    The package type is SO-8 (Small Outline 8-pin), which is lead-free.
  5. What is the junction-to-ambient thermal resistance of the NTMS4107NR2G?
    The junction-to-ambient thermal resistance (RθJA) is 75 °C/W.
  6. What are some common applications for the NTMS4107NR2G?
    Common applications include power supplies, DC-DC converters, motor control systems, audio amplifiers, and industrial control systems.
  7. Is the NTMS4107NR2G lead-free?
    Yes, the NTMS4107NR2G is packaged in a lead-free SO-8 package.
  8. What is the gate threshold voltage range of the NTMS4107NR2G?
    The gate threshold voltage (VGS(th)) range is 1.5 - 3.5 V.
  9. Where can I find detailed specifications for the NTMS4107NR2G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  10. What is the significance of the 'NR2G' suffix in the part number?
    The 'NR2G' suffix indicates the specific package and configuration of the device, including the SO-8 package and lead-free status.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):930mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4107NR2G NTMS4807NR2G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V 6.1mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 15 V 2900 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 930mW (Ta) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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