NTMFSC4D2N10MC
  • Share:

onsemi NTMFSC4D2N10MC

Manufacturer No:
NTMFSC4D2N10MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 29.6A/116A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFSC4D2N10MC is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of the CoolTM MOSFET family and is designed for high-power applications requiring low on-resistance and high current handling. The MOSFET features a DFN8 package, which is Pb-Free and Halogen-Free, making it suitable for environmentally friendly designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)116 A
RDS(ON) (On-Resistance)0.0037 Ω
TJ (Junction Temperature)-55°C to +175°C
Pd (Power Dissipation)122 W
PackageDFN8 (5x6.15 mm)

Key Features

  • Low on-resistance (RDS(ON)) of 0.0037 Ω, enhancing efficiency in high-power applications.
  • High continuous drain current (ID) of 116 A, suitable for demanding power management tasks.
  • Wide operating temperature range from -55°C to +175°C, ensuring reliability in various environmental conditions.
  • Pb-Free and Halogen-Free DFN8 package, compliant with environmental regulations.
  • High power dissipation capability of 122 W, making it ideal for high-power applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the NTMFSC4D2N10MC?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 116 A.
  3. What is the on-resistance of the NTMFSC4D2N10MC?
    The on-resistance (RDS(ON)) is 0.0037 Ω.
  4. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to +175°C.
  5. What type of package does the NTMFSC4D2N10MC come in?
    The device is packaged in a DFN8 (5x6.15 mm) package.
  6. Is the NTMFSC4D2N10MC Pb-Free and Halogen-Free?
    Yes, the NTMFSC4D2N10MC is Pb-Free and Halogen-Free.
  7. What is the power dissipation capability of this MOSFET?
    The power dissipation capability (Pd) is 122 W.
  8. What are some common applications for the NTMFSC4D2N10MC?
    Common applications include power supplies, motor control systems, industrial power management, automotive systems, and renewable energy systems.
  9. Why is the DFN8 package beneficial?
    The DFN8 package is beneficial due to its compact size and surface mount capability, which enhances thermal performance and reduces board space.
  10. Where can I find detailed specifications for the NTMFSC4D2N10MC?
    Detailed specifications can be found in the datasheet available on the onsemi website, DigiKey, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:29.6A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2856 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):7.9W (Ta), 122W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6.15)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$3.91
230

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC