NTMFSC4D2N10MC
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onsemi NTMFSC4D2N10MC

Manufacturer No:
NTMFSC4D2N10MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 29.6A/116A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFSC4D2N10MC is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of the CoolTM MOSFET family and is designed for high-power applications requiring low on-resistance and high current handling. The MOSFET features a DFN8 package, which is Pb-Free and Halogen-Free, making it suitable for environmentally friendly designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)116 A
RDS(ON) (On-Resistance)0.0037 Ω
TJ (Junction Temperature)-55°C to +175°C
Pd (Power Dissipation)122 W
PackageDFN8 (5x6.15 mm)

Key Features

  • Low on-resistance (RDS(ON)) of 0.0037 Ω, enhancing efficiency in high-power applications.
  • High continuous drain current (ID) of 116 A, suitable for demanding power management tasks.
  • Wide operating temperature range from -55°C to +175°C, ensuring reliability in various environmental conditions.
  • Pb-Free and Halogen-Free DFN8 package, compliant with environmental regulations.
  • High power dissipation capability of 122 W, making it ideal for high-power applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage of the NTMFSC4D2N10MC?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 116 A.
  3. What is the on-resistance of the NTMFSC4D2N10MC?
    The on-resistance (RDS(ON)) is 0.0037 Ω.
  4. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to +175°C.
  5. What type of package does the NTMFSC4D2N10MC come in?
    The device is packaged in a DFN8 (5x6.15 mm) package.
  6. Is the NTMFSC4D2N10MC Pb-Free and Halogen-Free?
    Yes, the NTMFSC4D2N10MC is Pb-Free and Halogen-Free.
  7. What is the power dissipation capability of this MOSFET?
    The power dissipation capability (Pd) is 122 W.
  8. What are some common applications for the NTMFSC4D2N10MC?
    Common applications include power supplies, motor control systems, industrial power management, automotive systems, and renewable energy systems.
  9. Why is the DFN8 package beneficial?
    The DFN8 package is beneficial due to its compact size and surface mount capability, which enhances thermal performance and reduces board space.
  10. Where can I find detailed specifications for the NTMFSC4D2N10MC?
    Detailed specifications can be found in the datasheet available on the onsemi website, DigiKey, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:29.6A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.3mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2856 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):7.9W (Ta), 122W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6.15)
Package / Case:8-PowerVDFN
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