NTMFS6B05NT1G
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onsemi NTMFS6B05NT1G

Manufacturer No:
NTMFS6B05NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 16A/104A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS6B05NT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This component is designed for high-power applications and is characterized by its low on-resistance and high current handling capabilities. However, it is important to note that this product is scheduled for obsolescence and will be discontinued by the manufacturer.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current104 A
Rds On - Drain-Source Resistance6.5 mΩ
Vgs - Gate-Source Voltage20 V
Package TypeDFN5 (Pb-Free)

Key Features

  • High continuous drain current of 104 A, making it suitable for high-power applications.
  • Low on-resistance of 6.5 mΩ, which minimizes power losses and enhances efficiency.
  • High drain-source breakdown voltage of 100 V, providing robust protection against voltage spikes.
  • Compact DFN5 package, which is Pb-Free, making it environmentally friendly.

Applications

The NTMFS6B05NT1G is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-current switching circuits.
  • Automotive and industrial power systems.

Q & A

  1. What is the continuous drain current of the NTMFS6B05NT1G?
    The continuous drain current is 104 A.
  2. What is the drain-source breakdown voltage of this MOSFET?
    The drain-source breakdown voltage is 100 V.
  3. What is the on-resistance of the NTMFS6B05NT1G?
    The on-resistance is 6.5 mΩ.
  4. What is the gate-source voltage rating for this component?
    The gate-source voltage rating is 20 V.
  5. What package type is the NTMFS6B05NT1G available in?
    The component is available in a DFN5 (Pb-Free) package.
  6. Is the NTMFS6B05NT1G still in production?
    No, the NTMFS6B05NT1G is scheduled for obsolescence and will be discontinued by the manufacturer.
  7. What are some typical applications for the NTMFS6B05NT1G?
    Typical applications include power supplies, motor control systems, high-current switching circuits, and automotive/industrial power systems.
  8. Where can I find detailed specifications for the NTMFS6B05NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. Is the NTMFS6B05NT1G environmentally friendly?
    Yes, the component is Pb-Free, making it environmentally friendly.
  10. What is the significance of the low on-resistance in the NTMFS6B05NT1G?
    The low on-resistance minimizes power losses and enhances the overall efficiency of the system.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 138W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$4.78
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Same Series
NTMFS6B05NT3G
NTMFS6B05NT3G
MOSFET N-CH 100V 16A/104A 5DFN

Similar Products

Part Number NTMFS6B05NT1G NTMFS6B05NT3G NTMFS6B03NT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 104A (Tc) 16A (Ta), 104A (Tc) 19A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V 8mOhm @ 20A, 10V 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 44 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 50 V 3100 pF @ 50 V 4200 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 3.3W (Ta), 138W (Tc) 3.3W (Ta), 138W (Tc) 3.4W (Ta), 165W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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