Overview
The NVMFS5C442NL, produced by onsemi, is a high-performance, single N-channel power MOSFET designed for compact and efficient power management solutions. This device is housed in a small footprint DFN5 or DFNW5 package, measuring 5x6 mm, making it ideal for space-constrained applications. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 40 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 130 | A |
| Continuous Drain Current (ID) at TC = 100°C | 95 | A |
| Power Dissipation (PD) at TC = 25°C | 83 | W |
| Power Dissipation (PD) at TC = 100°C | 42 | W |
| Pulsed Drain Current (IDM) | 900 | A |
| Operating Junction and Storage Temperature Range | −55 to +175 | °C |
| Gate Threshold Voltage (VGS(TH)) | 1.2 to 2.0 | V |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V | 2.0 to 2.5 | mΩ |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V | 2.9 to 3.7 | mΩ |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 or DFNW5 package for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 2.0 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: NVMFS5C442NLWF variant offers enhanced optical inspection capabilities.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, robotics, and other high-power applications.
- Consumer Electronics: Applicable in high-performance consumer electronics requiring efficient power handling.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C442NL?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 130 A at 25°C and 95 A at 100°C.
- What is the typical on-resistance of the MOSFET at VGS = 10 V?
The typical on-resistance (RDS(on)) is 2.5 mΩ at VGS = 10 V.
- Is the NVMFS5C442NL Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- What are the typical switching times for turn-on and turn-off?
The typical turn-on delay time (td(ON)) is 12 ns, and the typical turn-off delay time (td(OFF)) is 28 ns.
- Is the NVMFS5C442NL suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 900 A.
- What package options are available for the NVMFS5C442NL?
The device is available in DFN5 and DFNW5 packages.
