Overview
The NTMFS4C800NT1G is a power MOSFET produced by onsemi, utilizing advanced PowerTrench technology. This N-Channel MOSFET is designed to offer high performance and reliability in various power management applications. It features a low on-state resistance and optimized gate charge, which minimize conduction and switching losses. The device is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDS | 80 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 126 | A |
| Continuous Drain Current (TC = 100°C) | ID | 80 | A |
| On-State Resistance (VGS = 10 V, ID = 44 A) | RDS(on) | 4.0 mΩ | mΩ |
| On-State Resistance (VGS = 6 V, ID = 22 A) | RDS(on) | 12.5 mΩ | mΩ |
| Thermal Resistance, Junction to Case | RθJC | 1.0 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | −55 to +150 | °C |
Key Features
- Shielded Gate MOSFET Technology: Minimizes on-state resistance and maintains superior switching performance.
- Low On-State Resistance: RDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A.
- Optimized Gate Charge: Minimizes switching losses.
- 50% Lower Qrr: Reduces switching noise and EMI.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Guaranteed performance under specified conditions.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Primary DC-DC MOSFET: Suitable for high-efficiency DC-DC converters.
- Synchronous Rectifier in DC-DC and AC-DC: Enhances efficiency in power conversion systems.
- Motor Drive: Used in motor control applications requiring high current and low on-state resistance.
- Solar Applications: Ideal for solar power systems due to its high efficiency and reliability.
Q & A
- What is the maximum drain to source voltage of the NTMFS4C800NT1G MOSFET?
The maximum drain to source voltage is 80 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 126 A.
- What is the on-state resistance at VGS = 10 V and ID = 44 A?
The on-state resistance is 4.0 mΩ.
- Is the NTMFS4C800NT1G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications of the NTMFS4C800NT1G MOSFET?
Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar applications.
- What is the thermal resistance, junction to case, of the NTMFS4C800NT1G?
The thermal resistance, junction to case, is 1.0 °C/W.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is −55 to +150 °C.
- Does the NTMFS4C800NT1G have a robust package design?
Yes, it has an MSL1 robust package design.
- Is the NTMFS4C800NT1G 100% UIL tested?
Yes, it is 100% UIL tested.
- What is the significance of the Shielded Gate MOSFET Technology in the NTMFS4C800NT1G?
The Shielded Gate MOSFET Technology minimizes on-state resistance and maintains superior switching performance.
