NTMFS4C302NT1G
  • Share:

onsemi NTMFS4C302NT1G

Manufacturer No:
NTMFS4C302NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 41A/230A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C302NT1G is a high-performance Power MOSFET from ON Semiconductor, designed for reliable and efficient power management in various applications. This single N-Channel MOSFET features a 30V drain-to-source voltage rating, a maximum drain current of 230A, and a low on-resistance of 1.15mΩ at VGS = 10V. It is packaged in a compact SO-8FL or DFN-5 format, making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TJ = 25°C) ID 230 A
Power Dissipation (TJ = 25°C) PD 96 W
On-Resistance at VGS = 10V RDS(on) 1.15mΩ
Gate Threshold Voltage VGS(th) 1.3 - 2.2 V
Total Gate Charge at VGS = 10V QG(TOT) 82nC nC
Operating Junction and Storage Temperature TJ, Tstg -55 to +150 °C

Key Features

  • Small Footprint (5 x 6 mm): Ideal for compact circuit designs.
  • Low RDS(on): Reduces power consumption and heat generation.
  • Low QG and Capacitance: Minimizes switching losses and improves overall system performance.
  • RoHS Compliant: Ensures compliance with environmental regulations.

Applications

The NTMFS4C302NT1G is suitable for various applications that require efficient power management, including:

  • Industrial control systems
  • Automotive electronics
  • Consumer devices
  • Power supplies
  • Motor control systems
  • DC-DC converters
  • Load switches
  • Audio amplifiers

It is particularly useful in compact designs where space is limited and high current handling is necessary.

Q & A

  1. Q: What is the maximum current rating of the NTMFS4C302NT1G?

    A: The maximum current rating is 230A.

  2. Q: What is the on-resistance of the NTMFS4C302NT1G at VGS = 10V?

    A: The on-resistance is 1.15mΩ at VGS = 10V.

  3. Q: What is the gate threshold voltage of the NTMFS4C302NT1G?

    A: The gate threshold voltage is between 1.3V and 2.2V.

  4. Q: Is the NTMFS4C302NT1G RoHS compliant?

    A: Yes, the NTMFS4C302NT1G is RoHS compliant.

  5. Q: What is the operating junction and storage temperature range for the NTMFS4C302NT1G?

    A: The operating junction and storage temperature range is -55°C to +150°C.

  6. Q: What are the typical applications of the NTMFS4C302NT1G?

    A: Typical applications include power supplies, motor control systems, DC-DC converters, and load switches.

  7. Q: What is the package type of the NTMFS4C302NT1G?

    A: The package type is SO-8FL or DFN-5.

  8. Q: What is the total gate charge at VGS = 10V for the NTMFS4C302NT1G?

    A: The total gate charge is 82nC at VGS = 10V.

  9. Q: How does the NTMFS4C302NT1G minimize switching losses?

    A: It minimizes switching losses through its low QG and capacitance.

  10. Q: Can the NTMFS4C302NT1G be used in automotive electronics?

    A: Yes, it can be used in automotive electronics due to its high performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5780 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$2.71
38

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223