NTMFS4C302NT1G
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onsemi NTMFS4C302NT1G

Manufacturer No:
NTMFS4C302NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 41A/230A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C302NT1G is a high-performance Power MOSFET from ON Semiconductor, designed for reliable and efficient power management in various applications. This single N-Channel MOSFET features a 30V drain-to-source voltage rating, a maximum drain current of 230A, and a low on-resistance of 1.15mΩ at VGS = 10V. It is packaged in a compact SO-8FL or DFN-5 format, making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TJ = 25°C) ID 230 A
Power Dissipation (TJ = 25°C) PD 96 W
On-Resistance at VGS = 10V RDS(on) 1.15mΩ
Gate Threshold Voltage VGS(th) 1.3 - 2.2 V
Total Gate Charge at VGS = 10V QG(TOT) 82nC nC
Operating Junction and Storage Temperature TJ, Tstg -55 to +150 °C

Key Features

  • Small Footprint (5 x 6 mm): Ideal for compact circuit designs.
  • Low RDS(on): Reduces power consumption and heat generation.
  • Low QG and Capacitance: Minimizes switching losses and improves overall system performance.
  • RoHS Compliant: Ensures compliance with environmental regulations.

Applications

The NTMFS4C302NT1G is suitable for various applications that require efficient power management, including:

  • Industrial control systems
  • Automotive electronics
  • Consumer devices
  • Power supplies
  • Motor control systems
  • DC-DC converters
  • Load switches
  • Audio amplifiers

It is particularly useful in compact designs where space is limited and high current handling is necessary.

Q & A

  1. Q: What is the maximum current rating of the NTMFS4C302NT1G?

    A: The maximum current rating is 230A.

  2. Q: What is the on-resistance of the NTMFS4C302NT1G at VGS = 10V?

    A: The on-resistance is 1.15mΩ at VGS = 10V.

  3. Q: What is the gate threshold voltage of the NTMFS4C302NT1G?

    A: The gate threshold voltage is between 1.3V and 2.2V.

  4. Q: Is the NTMFS4C302NT1G RoHS compliant?

    A: Yes, the NTMFS4C302NT1G is RoHS compliant.

  5. Q: What is the operating junction and storage temperature range for the NTMFS4C302NT1G?

    A: The operating junction and storage temperature range is -55°C to +150°C.

  6. Q: What are the typical applications of the NTMFS4C302NT1G?

    A: Typical applications include power supplies, motor control systems, DC-DC converters, and load switches.

  7. Q: What is the package type of the NTMFS4C302NT1G?

    A: The package type is SO-8FL or DFN-5.

  8. Q: What is the total gate charge at VGS = 10V for the NTMFS4C302NT1G?

    A: The total gate charge is 82nC at VGS = 10V.

  9. Q: How does the NTMFS4C302NT1G minimize switching losses?

    A: It minimizes switching losses through its low QG and capacitance.

  10. Q: Can the NTMFS4C302NT1G be used in automotive electronics?

    A: Yes, it can be used in automotive electronics due to its high performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5780 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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