NTMFS4983NFT1G
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onsemi NTMFS4983NFT1G

Manufacturer No:
NTMFS4983NFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 22A/106A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NTMFS4983NFT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. The MOSFET is packaged in a 5-DFN (5x6) or 8-SOFL surface mount package, making it suitable for space-constrained designs while maintaining high thermal performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Continuous Drain Current (Id) at Ta22 A
Continuous Drain Current (Id) at Tc106 A
On-Resistance (Rds(on))Typically 2.5 mΩ (see datasheet for detailed conditions)
Package Type5-DFN (5x6), 8-SOFL
Power Dissipation (Pd) at Ta1.7 W

Key Features

  • High current handling capability with continuous drain current of 22 A at ambient temperature and 106 A at case temperature.
  • Low on-resistance, typically 2.5 mΩ, which minimizes power losses and enhances efficiency.
  • Compact 5-DFN (5x6) and 8-SOFL surface mount packages, ideal for space-constrained designs.
  • High voltage rating of 30 V, making it suitable for a variety of power management applications.

Applications

The NTMFS4983NFT1G MOSFET is versatile and can be used in various applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and automation.
  • Consumer electronics requiring high power density.

Q & A

  1. What is the voltage rating of the NTMFS4983NFT1G MOSFET?
    The voltage rating (Vds) of the NTMFS4983NFT1G MOSFET is 30 V.
  2. What is the continuous drain current at ambient temperature?
    The continuous drain current (Id) at ambient temperature (Ta) is 22 A.
  3. What is the continuous drain current at case temperature?
    The continuous drain current (Id) at case temperature (Tc) is 106 A.
  4. What is the typical on-resistance of the NTMFS4983NFT1G?
    The typical on-resistance (Rds(on)) is 2.5 mΩ.
  5. In what package types is the NTMFS4983NFT1G available?
    The NTMFS4983NFT1G is available in 5-DFN (5x6) and 8-SOFL surface mount packages.
  6. What is the power dissipation at ambient temperature?
    The power dissipation (Pd) at ambient temperature (Ta) is 1.7 W.
  7. What are some common applications for the NTMFS4983NFT1G?
    Common applications include power supplies, DC-DC converters, motor control systems, automotive systems, industrial control systems, and consumer electronics.
  8. Why is the NTMFS4983NFT1G suitable for space-constrained designs?
    The NTMFS4983NFT1G is suitable for space-constrained designs due to its compact 5-DFN (5x6) and 8-SOFL surface mount packages.
  9. What are the benefits of low on-resistance in the NTMFS4983NFT1G?
    Low on-resistance minimizes power losses and enhances efficiency in power management applications.
  10. Where can I find detailed specifications for the NTMFS4983NFT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:47.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3250 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NTMFS4983NFT3G
NTMFS4983NFT3G
MOSFET N-CH 30V 22A/106A 5DFN

Similar Products

Part Number NTMFS4983NFT1G NTMFS4985NFT1G NTMFS4983NFT3G NTMFS4982NFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 106A (Tc) 17.5A (Ta), 65A (Tc) 22A (Ta), 106A (Tc) 26.5A (Ta), 207A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V 1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA 2.3V @ 1mA 2.3V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 47.9 nC @ 10 V 30.5 nC @ 10 V 47.9 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 15 V 2100 pF @ 15 V 3250 pF @ 15 V 6000 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 1.7W (Ta) 1.63W (Ta), 22.73W (Tc) 1.7W (Ta), 38W (Tc) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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