NTMFS005P03P8ZT1G
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onsemi NTMFS005P03P8ZT1G

Manufacturer No:
NTMFS005P03P8ZT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS005P03P8ZT1G is a P-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features advanced trench technology, which enhances its electrical characteristics and thermal performance. The MOSFET is packaged in a compact SO-8 (DPAK) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)-30V
VGS (Gate-Source Voltage)±20V
RDS(ON) (On-Resistance)5.3
ID (Continuous Drain Current)34A
ID (Pulse Drain Current)68A
TJ (Junction Temperature)-55 to 150°C
PackageSO-8 (DPAK)

Key Features

  • Low On-Resistance (RDS(ON)) of 5.3 mΩ
  • High Continuous Drain Current (ID) of 34 A
  • Compact SO-8 (DPAK) package for space-saving designs
  • Advanced trench technology for improved electrical and thermal performance
  • Wide operating junction temperature range (-55°C to 150°C)

Applications

The NTMFS005P03P8ZT1G is suitable for various power management and switching applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control and drive systems
  • Automotive systems
  • Industrial power systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS005P03P8ZT1G?
    The maximum drain-source voltage (VDS) is -30 V.
  2. What is the on-resistance (RDS(ON)) of this MOSFET?
    The on-resistance (RDS(ON)) is 5.3 mΩ.
  3. What is the continuous drain current (ID) rating of the NTMFS005P03P8ZT1G?
    The continuous drain current (ID) rating is 34 A.
  4. What is the package type of the NTMFS005P03P8ZT1G?
    The package type is SO-8 (DPAK).
  5. What is the operating junction temperature range of this MOSFET?
    The operating junction temperature range is -55°C to 150°C.
  6. What technology is used in the NTMFS005P03P8ZT1G?
    The NTMFS005P03P8ZT1G uses advanced trench technology.
  7. What are some common applications for the NTMFS005P03P8ZT1G?
    Common applications include DC-DC converters, power supplies, motor control and drive systems, automotive systems, and industrial power systems.
  8. Where can I find detailed specifications for the NTMFS005P03P8ZT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser Electronics.
  9. What is the pulse drain current rating of the NTMFS005P03P8ZT1G?
    The pulse drain current rating is 68 A.
  10. Is the NTMFS005P03P8ZT1G suitable for high-power applications?
    Yes, the NTMFS005P03P8ZT1G is designed for high-performance and high-power applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15.3A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:7880 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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