NTJS3157NT1G
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onsemi NTJS3157NT1G

Manufacturer No:
NTJS3157NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SC88/SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJS3157NT1G is a Trench Power MOSFET produced by onsemi, designed for high-performance applications. This N-channel MOSFET features a voltage rating of 20 V and a current rating of 4 A, making it suitable for a variety of power management and switching applications. The device is packaged in the SC-88 (SOT-363) package, which is lead-free and RoHS compliant.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Current Rating (Id)4 A
Package TypeSC-88 (SOT-363)
Lead StatusPb-Free, RoHS Compliant
Threshold Voltage (Vth)1.0 V to 2.5 V
On-Resistance (Rds(on))Typically 150 mΩ at Vgs = 4.5 V
Operating Temperature Range-55°C to 150°C

Key Features

  • Trench Power MOSFET technology for low on-resistance and high efficiency
  • N-channel configuration with a voltage rating of 20 V and current rating of 4 A
  • Low threshold voltage (Vth) range of 1.0 V to 2.5 V for easy switching
  • High operating temperature range from -55°C to 150°C
  • Pb-Free and RoHS compliant SC-88 (SOT-363) package

Applications

The NTJS3157NT1G is suitable for various power management and switching applications, including but not limited to:

  • DC-DC converters and power supplies
  • Motor control and drive circuits
  • Audio amplifiers and power amplifiers
  • General-purpose switching and power management in consumer and industrial electronics

Q & A

  1. What is the voltage rating of the NTJS3157NT1G MOSFET?
    The voltage rating of the NTJS3157NT1G MOSFET is 20 V.
  2. What is the current rating of the NTJS3157NT1G MOSFET?
    The current rating of the NTJS3157NT1G MOSFET is 4 A.
  3. What package type is the NTJS3157NT1G MOSFET available in?
    The NTJS3157NT1G MOSFET is available in the SC-88 (SOT-363) package.
  4. Is the NTJS3157NT1G MOSFET lead-free and RoHS compliant?
    Yes, the NTJS3157NT1G MOSFET is lead-free and RoHS compliant.
  5. What is the typical on-resistance of the NTJS3157NT1G MOSFET?
    The typical on-resistance (Rds(on)) of the NTJS3157NT1G MOSFET is 150 mΩ at Vgs = 4.5 V.
  6. What is the operating temperature range of the NTJS3157NT1G MOSFET?
    The operating temperature range of the NTJS3157NT1G MOSFET is from -55°C to 150°C.
  7. What are some common applications for the NTJS3157NT1G MOSFET?
    The NTJS3157NT1G MOSFET is commonly used in DC-DC converters, motor control circuits, audio amplifiers, and general-purpose switching applications.
  8. What is the threshold voltage range of the NTJS3157NT1G MOSFET?
    The threshold voltage (Vth) range of the NTJS3157NT1G MOSFET is from 1.0 V to 2.5 V.
  9. Is the NTJS3157NT1G MOSFET suitable for high-frequency applications?
    Yes, the NTJS3157NT1G MOSFET is suitable for high-frequency applications due to its low on-resistance and fast switching characteristics.
  10. Where can I find detailed specifications for the NTJS3157NT1G MOSFET?
    Detailed specifications for the NTJS3157NT1G MOSFET can be found in the datasheet available on the onsemi website or through distributors like Mouser and Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-88/SC70-6/SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
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Same Series
NTJS3157NT2
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NTJS3157NT2G
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NTJS3157NT4
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NTJS3157NT4G
NTJS3157NT4G
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Similar Products

Part Number NTJS3157NT1G NTJS3157NT2G NTJS3157NT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 3.2A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 4.5V 60mOhm @ 4A, 4.5V 60mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 15 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 10 V 500 pF @ 10 V 500 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363

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