NTHL110N65S3F
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onsemi NTHL110N65S3F

Manufacturer No:
NTHL110N65S3F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 30A TO247-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTHL110N65S3F is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed to offer outstanding performance with its super-junction (SJ) technology, which provides low on-resistance and reduced gate charge. The MOSFET is packaged in a TO-247-3 through-hole configuration, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)650V
Continuous Drain Current (Id)30A
On-Resistance (Rds(on))110
Power Dissipation (Pd)240W
Thermal Resistance (RθJC)0.5°C/W
Package TypeTO-247-3

Key Features

  • Super-Junction Technology: Utilizes charge balance technology for low on-resistance and lower gate charge performance.
  • High Voltage Capability: Rated for 650 V, making it suitable for high-voltage applications.
  • High Current Handling: Continuous drain current of 30 A.
  • Low On-Resistance: Rds(on) of 110 mΩ.
  • High Power Dissipation: Capable of dissipating up to 240 W.

Applications

The NTHL110N65S3F is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems.
  • Renewable energy systems.
  • Automotive systems requiring high voltage and current handling.

Q & A

  1. What is the voltage rating of the NTHL110N65S3F MOSFET?
    The voltage rating of the NTHL110N65S3F MOSFET is 650 V.
  2. What is the continuous drain current of the NTHL110N65S3F?
    The continuous drain current is 30 A.
  3. What is the on-resistance of the NTHL110N65S3F?
    The on-resistance (Rds(on)) is 110 mΩ.
  4. What package type is the NTHL110N65S3F available in?
    The NTHL110N65S3F is available in a TO-247-3 through-hole package.
  5. What is the thermal resistance (RθJC) of the NTHL110N65S3F?
    The thermal resistance (RθJC) is 0.5 °C/W.
  6. What are some typical applications for the NTHL110N65S3F?
    Typical applications include power supplies, motor control systems, industrial power systems, renewable energy systems, and automotive systems.
  7. What technology does the NTHL110N65S3F use to achieve low on-resistance?
    The NTHL110N65S3F uses super-junction (SJ) technology with charge balance for low on-resistance and lower gate charge performance.
  8. How much power can the NTHL110N65S3F dissipate?
    The NTHL110N65S3F can dissipate up to 240 W.
  9. Is the NTHL110N65S3F suitable for high-voltage applications?
    Yes, the NTHL110N65S3F is designed for high-voltage applications.
  10. Where can I find detailed specifications for the NTHL110N65S3F?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2560 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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