Overview
The NTHL060N090SC1 is a high-performance Silicon Carbide (SiC) MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in various power electronics applications. With its ultra-low on-resistance and low gate charge, it is ideal for high-frequency switching and high-power density systems.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| On-Resistance (RDS(on)) @ VGS = 15 V | 60 | mΩ |
| On-Resistance (RDS(on)) @ VGS = 18 V | 43 | mΩ |
| Gate Charge (QG(tot)) | 87 | nC |
| Effective Output Capacitance | Low | - |
Key Features
- Ultra-low on-resistance, enhancing efficiency in high-power applications.
- Low gate charge, facilitating high-frequency switching.
- Low effective output capacitance, reducing switching losses.
- High reliability and durability, suitable for demanding environments.
Applications
The NTHL060N090SC1 SiC MOSFET is suitable for a variety of high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Electric vehicle (EV) charging systems.
- Renewable energy systems such as solar and wind power.
- Industrial power systems and motor drives.
Q & A
- What is the typical on-resistance of the NTHL060N090SC1 at VGS = 15 V? The typical on-resistance is 60 mΩ at VGS = 15 V.
- What is the gate charge of the NTHL060N090SC1? The typical gate charge is 87 nC.
- What are the key advantages of using the NTHL060N090SC1 in power electronics? The key advantages include ultra-low on-resistance, low gate charge, and low effective output capacitance.
- In which types of applications is the NTHL060N090SC1 commonly used? It is commonly used in power supplies, DC-DC converters, EV charging systems, renewable energy systems, and industrial power systems.
- What is the significance of low effective output capacitance in the NTHL060N090SC1? Low effective output capacitance reduces switching losses, improving overall system efficiency.
- How does the NTHL060N090SC1 compare to traditional silicon-based MOSFETs? The NTHL060N090SC1 offers superior performance with lower on-resistance and gate charge, making it more efficient for high-power applications.
- What is the typical operating voltage range for the NTHL060N090SC1? The datasheet does not specify a typical operating voltage range, but it is designed for high-voltage applications.
- Is the NTHL060N090SC1 suitable for high-frequency switching applications? Yes, it is suitable due to its low gate charge and low on-resistance.
- Where can I find detailed technical specifications for the NTHL060N090SC1? Detailed specifications can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Digi-Key and Mouser.
- What evaluation tools are available for testing the NTHL060N090SC1? onsemi offers evaluation boards such as the Discrete Double Pulse Tester (DPT) for comparative measurement and testing of SiC MOSFETs.
