Overview
The onsemi NTHL020N090SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications requiring high power handling and efficiency. This device is part of onsemi's EliteSiC family, known for its advanced technology and reliability. The NTHL020N090SC1 features a drain-to-source voltage (Vdss) of 900V, a continuous drain current (Id) of 118A, and a maximum power dissipation of 503W. It is packaged in a TO-247-3 through-hole configuration, making it suitable for a variety of power electronics applications.
Key Specifications
| Attribute | Description |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Type | N-Channel |
| No. of Channels | 1 |
| Drain-to-Source Voltage (Vdss) | 900V |
| Drain Current (Id) | 118A |
| Pulsed Drain Current (Idm) | 427A |
| On-state Resistance (Rds(on)) | 16mΩ @ 18V, 60A |
| Power Dissipation | 503W |
| Operating Temperature Range | -55°C to +175°C |
| Package Style | TO-247-3 |
| Mounting Method | Through Hole |
| Gate-Source Voltage (Vgs) | -10 to 19V |
| Gate Charge (Qg) | 196nC |
Key Features
- High voltage and current handling capabilities, making it suitable for high-power applications.
- Low on-state resistance (Rds(on)) of 16mΩ @ 18V, 60A, which reduces power losses and increases efficiency.
- Wide operating temperature range from -55°C to +175°C, ensuring reliability in various environmental conditions.
- Enhanced channel type for improved performance.
- Compliant with RoHS standards, ensuring environmental sustainability.
Applications
The onsemi NTHL020N090SC1 is ideal for a range of high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor drives and control systems.
- Renewable energy systems, such as solar and wind power inverters.
- Electric vehicle charging infrastructure and onboard power systems.
- Industrial power electronics and automation systems.
Q & A
- What is the drain-to-source voltage (Vdss) of the NTHL020N090SC1? The drain-to-source voltage (Vdss) is 900V.
- What is the continuous drain current (Id) of this MOSFET? The continuous drain current (Id) is 118A.
- What is the maximum power dissipation of the NTHL020N090SC1? The maximum power dissipation is 503W.
- What is the package style and mounting method of this device? The package style is TO-247-3, and the mounting method is through-hole.
- What is the operating temperature range of the NTHL020N090SC1? The operating temperature range is from -55°C to +175°C.
- Is the NTHL020N090SC1 RoHS compliant? Yes, the NTHL020N090SC1 is RoHS compliant.
- What is the on-state resistance (Rds(on)) of this MOSFET? The on-state resistance (Rds(on)) is 16mΩ @ 18V, 60A.
- What are some typical applications for the NTHL020N090SC1? Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging infrastructure, and industrial power electronics.
- What is the gate-source voltage (Vgs) range for this device? The gate-source voltage (Vgs) range is from -10 to 19V.
- What is the gate charge (Qg) of the NTHL020N090SC1? The gate charge (Qg) is 196nC.
