NTGS5120PT1G
  • Share:

onsemi NTGS5120PT1G

Manufacturer No:
NTGS5120PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.8A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS5120PT1G is a high-performance power MOSFET produced by onsemi, designed to meet the demands of various power management and switching applications. This device is part of onsemi's portfolio of power MOSFETs, known for their reliability, efficiency, and robust performance. The NTGS5120PT1G is packaged in a TSOP-6 (SOT-23-6) package, which is Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

ParameterValue
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Continuous Drain Current (Id) @ 25°C1.8 A
Maximum Power Dissipation (Pd)1.4 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
On-Resistance (Rds(on)) @ 10V, 3A95 mΩ
Package TypeTSOP-6 (SOT-23-6)

Key Features

  • High efficiency with low on-resistance (Rds(on)) of 95 mΩ @ 10V, 3A.
  • Wide operating temperature range from -55°C to +150°C.
  • High continuous drain current of 1.8 A.
  • Pb-free and RoHS compliant TSOP-6 (SOT-23-6) package.
  • Enhancement mode operation.

Applications

The NTGS5120PT1G is suitable for a variety of applications including power management, DC-DC converters, motor control, and general-purpose switching. Its high efficiency and robust performance make it an ideal choice for automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NTGS5120PT1G?
    The maximum drain to source voltage (Vdss) is 60 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 1.8 A.
  3. What is the on-resistance (Rds(on)) of the NTGS5120PT1G?
    The on-resistance (Rds(on)) is 95 mΩ @ 10V, 3A.
  4. What is the operating temperature range of the NTGS5120PT1G?
    The operating temperature range is from -55°C to +150°C.
  5. Is the NTGS5120PT1G Pb-free and RoHS compliant?
    Yes, the NTGS5120PT1G is Pb-free and RoHS compliant.
  6. What is the package type of the NTGS5120PT1G?
    The package type is TSOP-6 (SOT-23-6).
  7. What are some typical applications of the NTGS5120PT1G?
    Typical applications include power management, DC-DC converters, motor control, and general-purpose switching.
  8. What is the maximum power dissipation (Pd) of the NTGS5120PT1G?
    The maximum power dissipation (Pd) is 1.4 W.
  9. Is the NTGS5120PT1G suitable for automotive applications?
    Yes, the NTGS5120PT1G is suitable for automotive applications due to its robust performance and wide operating temperature range.
  10. What is the technology used in the NTGS5120PT1G?
    The technology used is MOSFET (Metal Oxide).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:111mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:942 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.53
1,491

Please send RFQ , we will respond immediately.

Same Series
NVGS5120PT1G
NVGS5120PT1G
MOSFET P-CH 60V 1.8A 6TSOP

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5