NTGS4141NT1G
  • Share:

onsemi NTGS4141NT1G

Manufacturer No:
NTGS4141NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS4141NT1G is a power, single, N-Channel MOSFET produced by onsemi. This device is packaged in a TSOP-6 case and is designed for high-performance applications. It features low RDS(on) and low gate charge, making it suitable for various power management and switching applications. The NVGS4141N variant is AEC-Q101 qualified and PPAP capable, catering to automotive and other demanding environments.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 5.0 A
Continuous Drain Current (TA = 85°C) ID 3.6 A
Pulsed Drain Current (tp = 10 μs, VGS = 10 V) IDM 45 A
Power Dissipation (TA = 25°C, Steady State) PD 1.0 W
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 7.0 A) RDS(on) 21.5 25
Gate Threshold Voltage VGS(TH) 1.0 3.0 V

Key Features

  • Low RDS(on) for reduced power losses
  • Low gate charge for efficient switching
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
  • Pb-Free package available
  • High continuous drain current and pulsed drain current capabilities
  • Wide operating junction and storage temperature range (-55°C to 150°C)

Applications

  • Load Switch
  • Notebook PC
  • Desktop PC
  • Automotive systems (for NVGS4141N variant)

Q & A

  1. What is the maximum drain-to-source voltage of the NTGS4141NT1G?

    The maximum drain-to-source voltage is 30 V.

  2. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 7.0 A?

    The typical drain-to-source on resistance is 21.5 mΩ.

  3. What are the operating junction and storage temperature ranges for this MOSFET?

    The operating junction and storage temperature ranges are -55°C to 150°C.

  4. Is the NTGS4141NT1G AEC-Q101 qualified?

    No, but the NVGS4141N variant is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum continuous drain current at TA = 25°C?

    The maximum continuous drain current at TA = 25°C is 5.0 A.

  6. What is the maximum pulsed drain current for tp = 10 μs and VGS = 10 V?

    The maximum pulsed drain current is 45 A.

  7. What is the typical gate threshold voltage?

    The typical gate threshold voltage is between 1.0 V and 3.0 V.

  8. What are some common applications for the NTGS4141NT1G?

    Common applications include load switches, notebook PCs, and desktop PCs.

  9. Is the package Pb-Free?
  10. What is the maximum power dissipation at TA = 25°C?

    The maximum power dissipation at TA = 25°C is 1.0 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.56
1,390

Please send RFQ , we will respond immediately.

Same Series
NVGS4141NT1G
NVGS4141NT1G
MOSFET N-CH 30V 3.5A 6TSOP

Similar Products

Part Number NTGS4141NT1G NTGS4141NT1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 24 V 560 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5