NTGS4141NT1G
  • Share:

onsemi NTGS4141NT1G

Manufacturer No:
NTGS4141NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS4141NT1G is a power, single, N-Channel MOSFET produced by onsemi. This device is packaged in a TSOP-6 case and is designed for high-performance applications. It features low RDS(on) and low gate charge, making it suitable for various power management and switching applications. The NVGS4141N variant is AEC-Q101 qualified and PPAP capable, catering to automotive and other demanding environments.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 5.0 A
Continuous Drain Current (TA = 85°C) ID 3.6 A
Pulsed Drain Current (tp = 10 μs, VGS = 10 V) IDM 45 A
Power Dissipation (TA = 25°C, Steady State) PD 1.0 W
Operating Junction and Storage Temperature TJ, TSTG -55 150 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 7.0 A) RDS(on) 21.5 25
Gate Threshold Voltage VGS(TH) 1.0 3.0 V

Key Features

  • Low RDS(on) for reduced power losses
  • Low gate charge for efficient switching
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
  • Pb-Free package available
  • High continuous drain current and pulsed drain current capabilities
  • Wide operating junction and storage temperature range (-55°C to 150°C)

Applications

  • Load Switch
  • Notebook PC
  • Desktop PC
  • Automotive systems (for NVGS4141N variant)

Q & A

  1. What is the maximum drain-to-source voltage of the NTGS4141NT1G?

    The maximum drain-to-source voltage is 30 V.

  2. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 7.0 A?

    The typical drain-to-source on resistance is 21.5 mΩ.

  3. What are the operating junction and storage temperature ranges for this MOSFET?

    The operating junction and storage temperature ranges are -55°C to 150°C.

  4. Is the NTGS4141NT1G AEC-Q101 qualified?

    No, but the NVGS4141N variant is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum continuous drain current at TA = 25°C?

    The maximum continuous drain current at TA = 25°C is 5.0 A.

  6. What is the maximum pulsed drain current for tp = 10 μs and VGS = 10 V?

    The maximum pulsed drain current is 45 A.

  7. What is the typical gate threshold voltage?

    The typical gate threshold voltage is between 1.0 V and 3.0 V.

  8. What are some common applications for the NTGS4141NT1G?

    Common applications include load switches, notebook PCs, and desktop PCs.

  9. Is the package Pb-Free?
  10. What is the maximum power dissipation at TA = 25°C?

    The maximum power dissipation at TA = 25°C is 1.0 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.56
1,390

Please send RFQ , we will respond immediately.

Same Series
NVGS4141NT1G
NVGS4141NT1G
MOSFET N-CH 30V 3.5A 6TSOP

Similar Products

Part Number NTGS4141NT1G NTGS4141NT1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 24 V 560 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP