NTGS3455T1G
  • Share:

onsemi NTGS3455T1G

Manufacturer No:
NTGS3455T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS3455T1G is a P-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This MOSFET is packaged in a TSOP-6 surface mount configuration, making it suitable for a variety of electronic systems where space efficiency and high current handling are required. The device is known for its low on-resistance and high current capability, making it an excellent choice for power management and switching applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)3.5 A
Drain-Source On-Resistance (Rds On)100 mOhms (0.094 ohm at Vgs = -10 V)
Gate-Source Voltage (Vgs)-20 V to 10 V
Power Dissipation (Pd)2 W
Package TypeTSOP-6, Surface Mount

Key Features

  • Low on-resistance (Rds On) of 100 mOhms, ensuring minimal power loss during operation.
  • High continuous drain current of 3.5 A, suitable for high current applications.
  • Compact TSOP-6 package, ideal for space-constrained designs.
  • Wide operating gate-source voltage range from -20 V to 10 V.
  • High power dissipation capability of 2 W.

Applications

The NTGS3455T1G P-Channel MOSFET is versatile and can be used in a variety of applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • Consumer electronics requiring high efficiency and reliability.

Q & A

  1. What is the drain-source breakdown voltage of the NTGS3455T1G?
    The drain-source breakdown voltage (Vds) is 30 V.
  2. What is the continuous drain current rating of the NTGS3455T1G?
    The continuous drain current (Id) is 3.5 A.
  3. What is the typical on-resistance of the NTGS3455T1G?
    The typical on-resistance (Rds On) is 100 mOhms (0.094 ohm at Vgs = -10 V).
  4. In what package is the NTGS3455T1G available?
    The NTGS3455T1G is available in a TSOP-6 surface mount package.
  5. What is the maximum power dissipation of the NTGS3455T1G?
    The maximum power dissipation (Pd) is 2 W.
  6. What is the operating gate-source voltage range for the NTGS3455T1G?
    The operating gate-source voltage range is from -20 V to 10 V.
  7. Is the NTGS3455T1G suitable for high current applications?
    Yes, the NTGS3455T1G is suitable for high current applications due to its 3.5 A continuous drain current rating.
  8. Can the NTGS3455T1G be used in automotive electronics?
    Yes, the NTGS3455T1G can be used in automotive electronics due to its robust specifications and reliability.
  9. What are some common applications of the NTGS3455T1G?
    Common applications include power management and switching circuits, DC-DC converters, motor control systems, and consumer electronics.
  10. Where can I find detailed specifications for the NTGS3455T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Farnell, and TME.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.55
1,053

Please send RFQ , we will respond immediately.

Same Series
NTGS3455T1
NTGS3455T1
MOSFET P-CH 30V 2.5A 6TSOP

Similar Products

Part Number NTGS3455T1G NTGS3455T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.5A, 10V 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 5 V 480 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE