NTGS3455T1G
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onsemi NTGS3455T1G

Manufacturer No:
NTGS3455T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTGS3455T1G is a P-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This MOSFET is packaged in a TSOP-6 surface mount configuration, making it suitable for a variety of electronic systems where space efficiency and high current handling are required. The device is known for its low on-resistance and high current capability, making it an excellent choice for power management and switching applications.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)3.5 A
Drain-Source On-Resistance (Rds On)100 mOhms (0.094 ohm at Vgs = -10 V)
Gate-Source Voltage (Vgs)-20 V to 10 V
Power Dissipation (Pd)2 W
Package TypeTSOP-6, Surface Mount

Key Features

  • Low on-resistance (Rds On) of 100 mOhms, ensuring minimal power loss during operation.
  • High continuous drain current of 3.5 A, suitable for high current applications.
  • Compact TSOP-6 package, ideal for space-constrained designs.
  • Wide operating gate-source voltage range from -20 V to 10 V.
  • High power dissipation capability of 2 W.

Applications

The NTGS3455T1G P-Channel MOSFET is versatile and can be used in a variety of applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • Consumer electronics requiring high efficiency and reliability.

Q & A

  1. What is the drain-source breakdown voltage of the NTGS3455T1G?
    The drain-source breakdown voltage (Vds) is 30 V.
  2. What is the continuous drain current rating of the NTGS3455T1G?
    The continuous drain current (Id) is 3.5 A.
  3. What is the typical on-resistance of the NTGS3455T1G?
    The typical on-resistance (Rds On) is 100 mOhms (0.094 ohm at Vgs = -10 V).
  4. In what package is the NTGS3455T1G available?
    The NTGS3455T1G is available in a TSOP-6 surface mount package.
  5. What is the maximum power dissipation of the NTGS3455T1G?
    The maximum power dissipation (Pd) is 2 W.
  6. What is the operating gate-source voltage range for the NTGS3455T1G?
    The operating gate-source voltage range is from -20 V to 10 V.
  7. Is the NTGS3455T1G suitable for high current applications?
    Yes, the NTGS3455T1G is suitable for high current applications due to its 3.5 A continuous drain current rating.
  8. Can the NTGS3455T1G be used in automotive electronics?
    Yes, the NTGS3455T1G can be used in automotive electronics due to its robust specifications and reliability.
  9. What are some common applications of the NTGS3455T1G?
    Common applications include power management and switching circuits, DC-DC converters, motor control systems, and consumer electronics.
  10. Where can I find detailed specifications for the NTGS3455T1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Farnell, and TME.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
NTGS3455T1
NTGS3455T1
MOSFET P-CH 30V 2.5A 6TSOP

Similar Products

Part Number NTGS3455T1G NTGS3455T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.5A, 10V 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 5 V 480 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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