NTGS3130NT1G
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onsemi NTGS3130NT1G

Manufacturer No:
NTGS3130NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 4.23A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS3130NT1G is a single N-Channel MOSFET produced by onsemi, designed for a variety of power management and switching applications. This MOSFET is packaged in a TSOP-6 format, making it suitable for space-constrained designs while offering high performance. The device is known for its low on-resistance and high current handling capabilities, making it an excellent choice for applications requiring efficient power switching.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)20 V
Maximum Continuous Drain Current (Id)5.6 A
On-Resistance (Rds(on))24 mΩ @ 5.6 A, 4.5 V
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Power Dissipation (Pd)1.1 W
Channel ModeEnhancement
Package TypeTSOP-6

Key Features

  • Low on-resistance (24 mΩ @ 5.6 A, 4.5 V) for efficient power switching
  • High current handling capability up to 5.6 A
  • Wide operating temperature range from -55 °C to +150 °C
  • Compact TSOP-6 package for space-saving designs
  • Enhancement mode operation for precise control
  • RoHS compliant, ensuring environmental sustainability

Applications

The NTGS3130NT1G MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management in consumer electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive systems requiring high reliability and temperature tolerance
  • Industrial control and automation

Q & A

  1. What is the maximum drain-source voltage of the NTGS3130NT1G MOSFET?
    The maximum drain-source voltage is 20 V.
  2. What is the maximum continuous drain current of the NTGS3130NT1G MOSFET?
    The maximum continuous drain current is 5.6 A.
  3. What is the on-resistance of the NTGS3130NT1G MOSFET?
    The on-resistance is 24 mΩ @ 5.6 A, 4.5 V.
  4. What is the operating temperature range of the NTGS3130NT1G MOSFET?
    The operating temperature range is from -55 °C to +150 °C.
  5. What is the power dissipation of the NTGS3130NT1G MOSFET?
    The power dissipation is 1.1 W.
  6. What type of package does the NTGS3130NT1G MOSFET use?
    The NTGS3130NT1G MOSFET is packaged in a TSOP-6 format.
  7. Is the NTGS3130NT1G MOSFET RoHS compliant?
    Yes, the NTGS3130NT1G MOSFET is RoHS compliant.
  8. What are some common applications of the NTGS3130NT1G MOSFET?
    Common applications include power management in consumer electronics, DC-DC converters, motor control, automotive systems, and industrial control.
  9. What is the channel mode of the NTGS3130NT1G MOSFET?
    The channel mode is enhancement.
  10. Where can I find the datasheet for the NTGS3130NT1G MOSFET?
    The datasheet can be found on the official onsemi website or through distributors like Mouser Electronics and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.23A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:24mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:935 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
NVGS3130NT1G
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