NTF3055L175T3LF
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onsemi NTF3055L175T3LF

Manufacturer No:
NTF3055L175T3LF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055L175T3LF is a logic-level N-Channel Power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications and is packaged in a Pb-Free SOT-223 (TO-261) case. It is suitable for use in power supplies, converters, power motor controls, and bridge circuits due to its high current handling and low on-resistance characteristics.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage VGS ±15 (Continuous), ±20 (Non-repetitive, tp ≤ 10 ms) Vdc, Vpk
Drain Current ID 2.0 A (Continuous @ TA = 25°C), 1.2 A (Continuous @ TA = 100°C), 6.0 A (Single Pulse, tp ≤ 10 μs) Adc, Apk
Total Power Dissipation @ TA = 25°C PD 2.1 W (Note 1), 1.3 W (Note 2) W
Operating and Storage Temperature Range TJ, Tstg -55 to 175 °C
Static Drain-to-Source On-Resistance RDS(on) 155 - 175 mΩ (VGS = 5.0 Vdc, ID = 1.0 Adc)
Thermal Resistance Junction-to-Ambient RθJA 72.3 °C/W (Note 1), 114 °C/W (Note 2) °C/W
Maximum Lead Temperature for Soldering TL 260 °C

Key Features

  • Pb-Free device, compliant with RoHS requirements.
  • Logic-level gate drive for ease of use with microcontrollers and other logic-level devices.
  • Low on-resistance (RDS(on)) of 155 - 175 mΩ at VGS = 5.0 Vdc and ID = 1.0 Adc.
  • High current handling capability with a continuous drain current of 2.0 A at TA = 25°C.
  • High speed switching characteristics with turn-on and turn-off delay times of 10.2 ns and 14.3 ns respectively.
  • Single pulse drain-to-source avalanche energy of 65 mJ.

Applications

  • Power Supplies: Suitable for use in DC-DC converters and other power supply circuits.
  • Converters: Used in various types of converters such as buck, boost, and flyback converters.
  • Power Motor Controls: Ideal for motor control applications due to its high current and low on-resistance.
  • Bridge Circuits: Can be used in half-bridge and full-bridge configurations for high efficiency switching.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTF3055L175T3LF?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current (ID) at TA = 25°C?

    The continuous drain current (ID) at TA = 25°C is 2.0 A.

  3. What is the typical on-resistance (RDS(on)) of the device?

    The typical on-resistance (RDS(on)) is 155 - 175 mΩ at VGS = 5.0 Vdc and ID = 1.0 Adc.

  4. What are the operating and storage temperature ranges for this device?

    The operating and storage temperature ranges are -55 to 175°C.

  5. Is the NTF3055L175T3LF Pb-Free?
  6. What are the typical turn-on and turn-off delay times?

    The typical turn-on delay time is 10.2 ns, and the typical turn-off delay time is 14.3 ns.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260°C.

  8. What are some common applications for the NTF3055L175T3LF?
  9. What is the single pulse drain-to-source avalanche energy?

    The single pulse drain-to-source avalanche energy is 65 mJ.

  10. What is the thermal resistance junction-to-ambient (RθJA) for this device?

    The thermal resistance junction-to-ambient (RθJA) is 72.3 °C/W (Note 1) and 114 °C/W (Note 2).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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