NTD3055L104-001
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onsemi NTD3055L104-001

Manufacturer No:
NTD3055L104-001
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 60V 12A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055L104-1G, produced by onsemi, is a power MOSFET designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is available in DPAK and IPAK packages and is optimized for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage VDGR 60 Vdc
Gate-to-Source Voltage, Continuous VGS -15 to 20 Vdc
Continuous Drain Current @ TA = 25°C ID 12 A
Continuous Drain Current @ TA = 100°C ID 10 A
Single Pulse Drain Current IDM 45 A
Total Power Dissipation @ TA = 25°C PD 48 W
Operating and Storage Temperature Range TJ, Tstg -55 to +175 °C
Gate Threshold Voltage VGS(th) 1.0 to 2.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) 89 to 104
Input Capacitance Ciss 316 to 440 pF
Turn-On Delay Time td(on) 9.2 to 20 ns

Key Features

  • Lower RDS(on) and VDS(on) for improved efficiency
  • Tighter VSD specification for better performance
  • Lower Diode Reverse Recovery Time and Reverse Recovery Stored Charge
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • Pb-free and RoHS compliant
  • Available in DPAK and IPAK packages

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTD3055L104-1G?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What are the typical applications of the NTD3055L104-1G?

    The typical applications include power supplies, converters, power motor controls, and bridge circuits.

  3. Is the NTD3055L104-1G AEC-Q101 qualified?
  4. What is the continuous drain current rating at TA = 25°C?

    The continuous drain current rating at TA = 25°C is 12 A.

  5. What is the total power dissipation at TA = 25°C?

    The total power dissipation at TA = 25°C is 48 W.

  6. What are the package options for the NTD3055L104-1G?

    The device is available in DPAK and IPAK packages.

  7. Is the NTD3055L104-1G Pb-free and RoHS compliant?
  8. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.0 Vdc.

  9. What is the typical turn-on delay time?

    The typical turn-on delay time is 9.2 to 20 ns.

  10. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to +175 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:104mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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