Overview
The NTB6413ANT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is part of the NTB6413AN series, which includes the NTP6413AN and NVB6413AN models. It is designed to offer low on-resistance, high current capability, and robust avalanche characteristics, making it suitable for various power management applications. Although the device is discontinued and not recommended for new designs, it remains relevant for existing projects and legacy systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 100 | V |
| Gate-to-Source Voltage (VGS) - Continuous | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 42 | A |
| Continuous Drain Current (ID) at TC = 100°C | 28 | A |
| Power Dissipation (PD) at TC = 25°C | 136 | W |
| Pulsed Drain Current (IDM) tp = 10 μs | 178 | A |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to +175 | °C |
| Source Current (Body Diode) (IS) | 42 | A |
| Single Pulse Drain-to-Source Avalanche Energy (EAS) | 200 | mJ |
| Lead Temperature for Soldering Purposes | 260 | °C |
| Junction-to-Case Thermal Resistance (RθJC) | 1.1 | °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 35 | °C/W |
| Drain-to-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 42 A | 28 | mΩ |
Key Features
- Low RDS(on): The NTB6413ANT4G features a low on-resistance of 28 mΩ at VGS = 10 V and ID = 42 A, enhancing efficiency in power management.
- High Current Capability: It can handle continuous drain currents up to 42 A at 25°C and 28 A at 100°C.
- 100% Avalanche Tested: The device is rigorously tested for avalanche energy, ensuring robustness under high-stress conditions.
- AEC-Q101 Qualified and PPAP Capable: The NVB prefix models are qualified to AEC-Q101 standards and are PPAP capable, making them suitable for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: The device is lead-free and complies with RoHS regulations, ensuring environmental sustainability.
Applications
The NTB6413ANT4G is suitable for a variety of power management applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Industrial power supplies: Its high current capability and low on-resistance make it a good choice for industrial power supply applications.
- Motor control: The device can be used in motor control circuits due to its robust avalanche characteristics and high current handling.
- Power conversion: It is applicable in various power conversion scenarios such as DC-DC converters and power factor correction circuits.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTB6413ANT4G?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 42 A at 25°C and 28 A at 100°C.
- What is the on-resistance (RDS(on)) of the NTB6413ANT4G?
The on-resistance (RDS(on)) is 28 mΩ at VGS = 10 V and ID = 42 A.
- Is the NTB6413ANT4G Pb-Free and RoHS Compliant?
Yes, the device is lead-free and complies with RoHS regulations.
- What is the operating junction and storage temperature range of the NTB6413ANT4G?
The operating junction and storage temperature range is -55°C to +175°C.
- What is the single pulse drain-to-source avalanche energy (EAS) of the NTB6413ANT4G?
The single pulse drain-to-source avalanche energy (EAS) is 200 mJ.
- Is the NTB6413ANT4G suitable for automotive applications?
Yes, the NVB prefix models are AEC-Q101 qualified and PPAP capable, making them suitable for automotive applications.
- What is the junction-to-case thermal resistance (RθJC) of the NTB6413ANT4G?
The junction-to-case thermal resistance (RθJC) is 1.1°C/W.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- Is the NTB6413ANT4G still recommended for new designs?
No, the device is discontinued and not recommended for new designs.
