NTB6410ANT4G
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onsemi NTB6410ANT4G

Manufacturer No:
NTB6410ANT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 76A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The NTB6410ANT4G is a high-performance N-Channel Power MOSFET manufactured by onsemi. This device is designed for use in various power management and switching applications, offering superior performance and reliability. The NTB6410ANT4G is housed in a D2PAK package, making it suitable for a wide range of electronic systems that require efficient power handling.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 76 A
RDS(ON) (On-Resistance) 10 mΩ @ 10 V, 20 A
Pd (Power Dissipation) 188 W
TJ (Junction Temperature) -55°C to +175°C
Qg (Gate Charge) 120 nC
VGS(th) (Threshold Voltage) 4 V @ 250 μA

Key Features

  • High Current Capability: The NTB6410ANT4G can handle a continuous drain current of 76 A, making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of 10 mΩ at 10 V and 20 A, this MOSFET minimizes power losses and enhances efficiency.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
  • High Power Dissipation: The MOSFET can dissipate up to 188 W, making it ideal for demanding power management scenarios.
  • ROHS Compliant: The NTB6410ANT4G is ROHS compliant, ensuring it meets environmental standards.

Applications

  • Switched Mode Power Supplies (SMPS): The NTB6410ANT4G is well-suited for use in SMPS due to its high current handling and low on-resistance.
  • Automotive Systems: Its robust performance and wide operating temperature range make it a good fit for automotive applications.
  • Motor Control: The MOSFET is used in motor control circuits where high current and efficient switching are required.
  • Computer Peripherals and Handheld Devices: It is used in various electronic devices such as smartphones, notebooks, and handheld gaming systems.

Q & A

  1. What is the maximum drain-source voltage of the NTB6410ANT4G?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current rating of the NTB6410ANT4G?

    The continuous drain current (ID) is 76 A.

  3. What is the on-resistance of the NTB6410ANT4G?

    The on-resistance (RDS(ON)) is 10 mΩ at 10 V and 20 A.

  4. What is the power dissipation capability of the NTB6410ANT4G?

    The power dissipation (Pd) is 188 W.

  5. What is the operating temperature range of the NTB6410ANT4G?

    The operating temperature range is -55°C to +175°C.

  6. What is the gate charge of the NTB6410ANT4G?

    The gate charge (Qg) is 120 nC.

  7. Is the NTB6410ANT4G ROHS compliant?

    Yes, the NTB6410ANT4G is ROHS compliant.

  8. What are some common applications of the NTB6410ANT4G?

    Common applications include Switched Mode Power Supplies (SMPS), automotive systems, motor control, and computer peripherals.

  9. What package type is the NTB6410ANT4G available in?

    The NTB6410ANT4G is available in a D2PAK package.

  10. Why is the NTB6410ANT4G suitable for high-power applications?

    The NTB6410ANT4G is suitable for high-power applications due to its high current capability, low on-resistance, and high power dissipation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 76A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
NTP6410ANG
NTP6410ANG
MOSFET N-CH 100V 76A TO220AB
NTB6410ANG
NTB6410ANG
MOSFET N-CH 100V 76A D2PAK
NVB6410ANT4G
NVB6410ANT4G
MOSFET N-CH 100V 76A D2PAK

Similar Products

Part Number NTB6410ANT4G NTB6413ANT4G NTB6411ANT4G NTB6412ANT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 42A (Tc) 77A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 76A, 10V 28mOhm @ 42A, 10V 14mOhm @ 72A, 10V 18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 51 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 1800 pF @ 25 V 3700 pF @ 25 V 3500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 188W (Tc) 136W (Tc) 217W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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