Overview
The NTB6411ANT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is part of the NTB6411AN series, which includes variants in D2PAK and TO-220 packages. It is designed to offer low on-resistance (RDS(on)) and high current capability, making it suitable for a wide range of power management applications.
The NTB6411ANT4G is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements. Additionally, it is lead-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage - Continuous | VGS | −20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 77 | A |
| Continuous Drain Current (TC = 100°C) | ID | 54 | A |
| On-Resistance (RDS(on)) at VGS = 10 V, ID = 72 A | RDS(on) | 12.7 - 14 | mΩ |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V |
| Power Dissipation (TC = 25°C) | PD | 188 | W |
| Junction-to-Case Thermal Resistance | RθJC | 0.8 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 32 | °C/W |
Key Features
- Low RDS(on): The NTB6411ANT4G features a low on-resistance, which minimizes power losses and enhances efficiency in power management applications.
- High Current Capability: With a continuous drain current of up to 77 A at 25°C, this MOSFET is suitable for high-power applications.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
The NTB6411ANT4G is versatile and can be used in various applications, including:
- Automotive Systems: Suitable for automotive power management due to its AEC-Q101 qualification and PPAP capability.
- Power Supplies: Ideal for high-power supply designs requiring low on-resistance and high current handling.
- Motor Control: Used in motor control circuits where high current and low on-resistance are critical.
- Industrial Power Management: Applicable in industrial power management systems that require robust and efficient power MOSFETs.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTB6411ANT4G?
The maximum drain-to-source voltage (VDSS) is 100 V.
- What is the continuous drain current (ID) at 25°C for the NTB6411ANT4G?
The continuous drain current (ID) at 25°C is 77 A.
- What is the on-resistance (RDS(on)) of the NTB6411ANT4G at VGS = 10 V and ID = 72 A?
The on-resistance (RDS(on)) is between 12.7 mΩ and 14 mΩ.
- Is the NTB6411ANT4G AEC-Q101 qualified?
Yes, the NTB6411ANT4G is AEC-Q101 qualified and PPAP capable.
- What are the package options available for the NTB6411AN series?
The NTB6411AN series is available in D2PAK and TO-220 packages.
- Is the NTB6411ANT4G lead-free and RoHS compliant?
Yes, the NTB6411ANT4G is lead-free and RoHS compliant.
- What is the junction-to-case thermal resistance (RθJC) of the NTB6411ANT4G?
The junction-to-case thermal resistance (RθJC) is 0.8 °C/W.
- What is the gate threshold voltage (VGS(th)) range for the NTB6411ANT4G?
The gate threshold voltage (VGS(th)) range is between 2.0 V and 4.0 V.
- What are some typical applications for the NTB6411ANT4G?
Typical applications include automotive systems, power supplies, motor control, and industrial power management.
- What is the maximum power dissipation (PD) at 25°C for the NTB6411ANT4G?
The maximum power dissipation (PD) at 25°C is 188 W.
