Overview
The NTB004N10G is a high-performance, N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and high current capability, making it suitable for a variety of power management applications. The NTB004N10G features a drain-to-source voltage (VDS) of 100 V, a continuous drain current (ID) of up to 201 A at 25°C, and a maximum power dissipation of 340 W. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDS | 100 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 201 | A |
| Continuous Drain Current (TC = 100°C) | ID | 142 | A |
| Power Dissipation (TC = 25°C) | PD | 340 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 3002 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | 283 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 520 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 0.44 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V |
| Drain-to-Source On-Resistance (RDS(on)) | RDS(on) | 3.4 - 4.2 mΩ @ 10 V | mΩ |
Key Features
- Low RDS(on): The NTB004N10G features a low on-resistance of 3.4 to 4.2 mΩ at 10 V, which minimizes power losses and enhances efficiency.
- High Current Capability: With a continuous drain current of up to 201 A at 25°C, this MOSFET is suitable for high-power applications.
- Wide Safe Operating Area (SOA): The device has a wide SOA, ensuring reliable operation under various conditions.
- Pb-free and RoHS Compliant: The NTB004N10G is environmentally friendly, adhering to Pb-free and RoHS standards.
Applications
- Hot Swap in 48 V Systems: The NTB004N10G is particularly suited for hot swap applications in 48 V systems due to its high current and voltage ratings.
- Power Management Systems: It can be used in various power management systems requiring high efficiency and reliability.
- Industrial and Automotive Systems: The device is also applicable in industrial and automotive systems where high power handling is necessary.
Q & A
- What is the maximum drain-to-source voltage of the NTB004N10G?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is up to 201 A.
- What is the typical on-resistance (RDS(on)) of the NTB004N10G?
The typical on-resistance (RDS(on)) is 4.2 mΩ at 10 V.
- Is the NTB004N10G Pb-free and RoHS compliant?
Yes, the NTB004N10G is Pb-free and RoHS compliant.
- What is the operating junction temperature range of the NTB004N10G?
The operating junction temperature range is -55 to +175°C.
- What is the maximum power dissipation of the NTB004N10G at 25°C?
The maximum power dissipation (PD) at 25°C is 340 W.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy (EAS) is 520 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are some typical applications of the NTB004N10G?
Typical applications include hot swap in 48 V systems, power management systems, and industrial and automotive systems.
- What is the junction-to-case thermal resistance of the NTB004N10G?
The junction-to-case thermal resistance (RθJC) is 0.44 °C/W.
