NTA7002NT1G
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onsemi NTA7002NT1G

Manufacturer No:
NTA7002NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 154MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTA7002NT1G is a single N-Channel, small signal MOSFET produced by onsemi. This device is designed with a small footprint and features gate ESD protection, making it suitable for a variety of applications. It is packaged in a SC-75 (SOT-416) case and is Pb-free and RoHS compliant. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS−10V
Continuous Drain CurrentID154mA
Power DissipationPD300mW
Pulsed Drain CurrentIDM618mA
Operating Junction and Storage TemperatureTJ, TSTG−55 to 150°C
Continuous Source Current (Body Diode)ISD154mA
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Ambient Thermal ResistanceR⁣JA416°C/W
Gate Threshold VoltageVGS(TH)0.5 to 1.5V
Drain-to-Source On ResistanceRDS(on)1.4 Ω @ VGS = 4.5 V, ID = 154 mAΩ

Key Features

  • Low Gate Charge for Fast Switching
  • Small 1.6 x 1.6 mm Footprint
  • ESD Protected Gate
  • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-free and RoHS Compliant

Applications

  • Power Management Load Switch
  • Level Shift
  • Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand-Held Computers, etc.

Q & A

  1. What is the maximum drain-to-source voltage of the NTA7002NT1G MOSFET? The maximum drain-to-source voltage is 30 V.
  2. What is the continuous drain current rating of this MOSFET? The continuous drain current rating is 154 mA.
  3. Is the NTA7002NT1G Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  4. What are the operating junction and storage temperatures for this device? The operating junction and storage temperatures range from -55°C to 150°C.
  5. What is the typical on-resistance of the NTA7002NT1G at VGS = 4.5 V and ID = 154 mA? The typical on-resistance is 1.4 Ω.
  6. What are some common applications of the NTA7002NT1G? Common applications include power management load switches, level shifts, and various portable electronic devices.
  7. Is the NTA7002NT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments.
  8. What is the maximum power dissipation of the NTA7002NT1G? The maximum power dissipation is 300 mW.
  9. What is the gate threshold voltage range of this MOSFET? The gate threshold voltage range is from 0.5 V to 1.5 V.
  10. How is the NTA7002NT1G packaged? It is packaged in a SC-75 (SOT-416) case.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:154mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75, SOT-416
Package / Case:SC-75, SOT-416
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In Stock

$0.34
2,250

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Same Series
NTA7002NT1G
NTA7002NT1G
MOSFET N-CH 30V 154MA SC75
NTA7002NT1
NTA7002NT1
MOSFET N-CH 30V 154MA SC75

Similar Products

Part Number NTA7002NT1G NTA7002NT1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 154mA (Tj) 154mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 7Ohm @ 154mA, 4.5V 7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 5 V 20 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 300mW (Tj) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416
Package / Case SC-75, SOT-416 SC-75, SOT-416

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