Overview
The NSV1C200LT1G is a 100 V, 2.0 A, low VCE(sat) PNP transistor from ON Semiconductor's e2PowerEdge family. These miniature surface mount devices are designed for use in low voltage, high speed switching applications where efficient energy control is crucial. They feature ultra-low saturation voltage (VCE(sat)) and high current gain capability, making them ideal for a variety of applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -100 | Vdc | ||
| Collector-Base Voltage | VCBO | -140 | Vdc | ||
| Emitter-Base Voltage | VEBO | -7.0 | Vdc | ||
| Collector Current - Continuous | IC | -2.0 | A | ||
| Collector Current - Peak | ICM | -3.0 | A | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.040 | -0.080 | -0.250 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.950 | V | ||
| Cutoff Frequency | fT | 120 | MHz | ||
| Input Capacitance | Cibo | 200 | pF | ||
| Output Capacitance | Cobo | 22 | pF | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Key Features
- Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
- Designed for low voltage, high speed switching applications.
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High current gain allows devices to be driven directly from PMU’s control outputs.
- Ideal components in analog amplifiers due to linear gain (Beta).
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products such as disc drives and tape drives.
- Automotive industry applications including air bag deployment and instrument clusters.
Q & A
- What is the maximum collector-emitter voltage of the NSV1C200LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -100 Vdc.
- What is the continuous collector current rating of the NSV1C200LT1G?
The continuous collector current (IC) is -2.0 A.
- What is the typical collector-emitter saturation voltage (VCE(sat)) of the NSV1C200LT1G?
The typical VCE(sat) ranges from -0.040 V to -0.250 V depending on the collector and base currents.
- Is the NSV1C200LT1G RoHS compliant?
- What are some typical applications of the NSV1C200LT1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications such as air bag deployment and instrument clusters.
- What is the cutoff frequency of the NSV1C200LT1G transistor?
The cutoff frequency (fT) is 120 MHz.
- What is the input capacitance of the NSV1C200LT1G transistor?
The input capacitance (Cibo) is 200 pF.
- What is the junction and storage temperature range of the NSV1C200LT1G transistor?
The junction and storage temperature range (TJ, Tstg) is -55°C to +150°C.
- Is the NSV1C200LT1G suitable for automotive applications?
- What package type is the NSV1C200LT1G available in?
The NSV1C200LT1G is available in the SOT-23 (TO-236) package.
