NSS1C200LT1G
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onsemi NSS1C200LT1G

Manufacturer No:
NSS1C200LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 100V 2A SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The NSS1C200LT1G is a bipolar junction transistor (BJT) produced by onsemi. It is a PNP transistor designed for various low-power surface mount applications. This transistor is housed in the SOT-23-3 (TO-236) package, making it suitable for compact and efficient circuit designs. The NSS1C200LT1G is versatile and can be used in general-purpose amplifier applications, among others.

Key Specifications

ParameterValue
TypeBipolar Junction Transistor (BJT) PNP
Collector-Emitter Voltage (Vce)100 V
Collector Current (Ic)2 A
Transition Frequency (fT)120 MHz
Power Dissipation (Pd)490 mW
PackageSOT-23-3 (TO-236)

Key Features

  • PNP bipolar junction transistor
  • High collector current of 2 A
  • High collector-emitter voltage of 100 V
  • Transition frequency of 120 MHz, suitable for high-frequency applications
  • Low power dissipation of 490 mW
  • Compact SOT-23-3 (TO-236) surface mount package

Applications

The NSS1C200LT1G is designed for general-purpose amplifier applications and can be used in a variety of electronic circuits. Some common applications include:

  • Audio amplifiers
  • Switching circuits
  • Power management circuits
  • Automotive and industrial control systems

Q & A

  1. What is the collector-emitter voltage of the NSS1C200LT1G?
    The collector-emitter voltage (Vce) of the NSS1C200LT1G is 100 V.
  2. What is the collector current rating of the NSS1C200LT1G?
    The collector current (Ic) rating of the NSS1C200LT1G is 2 A.
  3. What is the transition frequency of the NSS1C200LT1G?
    The transition frequency (fT) of the NSS1C200LT1G is 120 MHz.
  4. What is the power dissipation of the NSS1C200LT1G?
    The power dissipation (Pd) of the NSS1C200LT1G is 490 mW.
  5. In what package is the NSS1C200LT1G housed?
    The NSS1C200LT1G is housed in the SOT-23-3 (TO-236) surface mount package.
  6. What are some common applications of the NSS1C200LT1G?
    The NSS1C200LT1G is commonly used in general-purpose amplifier applications, audio amplifiers, switching circuits, power management circuits, and automotive and industrial control systems.
  7. Who is the manufacturer of the NSS1C200LT1G?
    The NSS1C200LT1G is produced by onsemi.
  8. What type of transistor is the NSS1C200LT1G?
    The NSS1C200LT1G is a PNP bipolar junction transistor (BJT).
  9. Is the NSS1C200LT1G suitable for high-frequency applications?
    Yes, the NSS1C200LT1G is suitable for high-frequency applications due to its transition frequency of 120 MHz.
  10. Where can I find detailed specifications for the NSS1C200LT1G?
    Detailed specifications for the NSS1C200LT1G can be found in the datasheet available on websites such as Digi-Key, Mouser Electronics, and the official onsemi website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 50mA, 2V
Power - Max:490 mW
Frequency - Transition:120MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
NSV1C200LT1G
NSV1C200LT1G
TRANS PNP 100V 2A SOT23-3

Similar Products

Part Number NSS1C200LT1G NSS1C201LT1G NSV1C200LT1G NSS12200LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 12 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 2A 150mV @ 200mA, 2A 250mV @ 200mA, 2A 180mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 2V 120 @ 500mA, 2V 120 @ 500mA, 2V 250 @ 500mA, 2V
Power - Max 490 mW 490 mW 490 mW 460 mW
Frequency - Transition 120MHz 110MHz 120MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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