NSS12200LT1G
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onsemi NSS12200LT1G

Manufacturer No:
NSS12200LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 12V 2A SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The NSS12200LT1G is a bipolar junction transistor (BJT) produced by ON Semiconductor. It belongs to the e2PowerEdge family, known for its low VCE(sat) characteristics. This PNP transistor is designed for high-performance applications requiring low saturation voltage and high current handling.

Key Specifications

ParameterValue
Transistor TypePNP
Collector-Emitter Voltage (Vce)12 V
Collector Current (Ic)2 A
Saturation Voltage (Vce(sat))Ultra Low
Power Dissipation (Pd)460 mW
Package TypeSOT-23, Surface Mount

Key Features

  • Ultra low saturation voltage (Vce(sat)) for reduced power losses.
  • High collector current of 2 A, suitable for high-current applications.
  • Compact SOT-23 surface mount package for space-efficient designs.
  • Low power dissipation of 460 mW, enhancing thermal management.

Applications

The NSS12200LT1G is suitable for a variety of high-performance applications, including:

  • Power management and switching circuits.
  • Automotive systems requiring high reliability and low power consumption.
  • Industrial control systems and motor drives.
  • Consumer electronics where space and efficiency are critical.

Q & A

  1. What is the transistor type of the NSS12200LT1G?
    The NSS12200LT1G is a PNP bipolar junction transistor.
  2. What is the maximum collector current of the NSS12200LT1G?
    The maximum collector current is 2 A.
  3. What is the collector-emitter voltage (Vce) of the NSS12200LT1G?
    The collector-emitter voltage (Vce) is 12 V.
  4. What is the package type of the NSS12200LT1G?
    The package type is SOT-23, surface mount.
  5. What is the power dissipation (Pd) of the NSS12200LT1G?
    The power dissipation is 460 mW.
  6. Why is the NSS12200LT1G part of the e2PowerEdge family?
    The NSS12200LT1G is part of the e2PowerEdge family due to its ultra low saturation voltage (Vce(sat)) and high performance characteristics.
  7. What are some typical applications of the NSS12200LT1G?
    Typical applications include power management and switching circuits, automotive systems, industrial control systems, and consumer electronics.
  8. How does the NSS12200LT1G contribute to thermal management in designs?
    The NSS12200LT1G contributes to thermal management through its low power dissipation of 460 mW.
  9. What are the benefits of the ultra low Vce(sat) in the NSS12200LT1G?
    The ultra low Vce(sat) reduces power losses and enhances overall efficiency in the circuit.
  10. Where can I find detailed specifications for the NSS12200LT1G?
    Detailed specifications can be found in the datasheet available on ON Semiconductor's official website or through distributors like Farnell.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:180mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 500mA, 2V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
NSV12200LT1G
NSV12200LT1G
TRANS PNP 12V 2A SOT23-3

Similar Products

Part Number NSS12200LT1G NSS12201LT1G NSS12200WT1G NSV12200LT1G NSS1C200LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Last Time Buy Active Active
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V 12 V 12 V 100 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A 90mV @ 200mA, 2A 290mV @ 20mA, 1A 180mV @ 200mA, 2A 250mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V 200 @ 500mA, 2V 100 @ 800mA, 1.5 V 250 @ 500mA, 2V 120 @ 50mA, 2V
Power - Max 460 mW 460 mW 450 mW 540 mW 490 mW
Frequency - Transition 100MHz 150MHz 100MHz 100MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 6-TSSOP, SC-88, SOT-363 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-88/SC70-6/SOT-363 SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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