NSS12201LT1G
  • Share:

onsemi NSS12201LT1G

Manufacturer No:
NSS12201LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 12V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NSS12201LT1G is a high-performance NPN digital transistor from the e2PowerEdge family. This transistor is designed in a miniature surface mount SOT-23 package, making it ideal for space-constrained applications. It features ultra-low saturation voltage (VCE(sat)) and high current handling capabilities, which enhance its efficiency and reliability in various electronic circuits.

Key Specifications

ParameterValue
Maximum DC Collector Current2 A
Collector-Emitter Voltage (VCEO Max)12 V
Collector-Base Voltage (VCBO)12 V
Emitter-Base Voltage (VEBO)6 V
Package TypeSOT-23
Saturation Voltage (VCE(sat))Ultra Low

Key Features

  • Ultra-low saturation voltage (VCE(sat)) for high efficiency
  • High current handling capability up to 2 A
  • Miniature SOT-23 surface mount package for compact designs
  • Low power consumption
  • High reliability and durability

Applications

The onsemi NSS12201LT1G transistor is suitable for a variety of applications, including:

  • Switching circuits in consumer electronics
  • Automotive systems requiring high reliability and low power consumption
  • Industrial control systems
  • Power management circuits in portable devices
  • General-purpose switching and amplification

Q & A

  1. What is the maximum DC collector current of the NSS12201LT1G transistor?
    The maximum DC collector current is 2 A.
  2. What is the collector-emitter voltage (VCEO) of the NSS12201LT1G transistor?
    The collector-emitter voltage (VCEO) is 12 V.
  3. What package type does the NSS12201LT1G transistor use?
    The transistor is packaged in a SOT-23 surface mount package.
  4. What is the emitter-base voltage (VEBO) of the NSS12201LT1G transistor?
    The emitter-base voltage (VEBO) is 6 V.
  5. What are the key features of the NSS12201LT1G transistor?
    The key features include ultra-low saturation voltage, high current handling, and a compact SOT-23 package.
  6. Where can the NSS12201LT1G transistor be used?
    The transistor can be used in switching circuits, automotive systems, industrial control systems, power management circuits, and general-purpose switching and amplification.
  7. Why is the NSS12201LT1G transistor part of the e2PowerEdge family?
    The NSS12201LT1G is part of the e2PowerEdge family due to its ultra-low saturation voltage and high efficiency.
  8. What is the typical application of the NSS12201LT1G in consumer electronics?
    In consumer electronics, it is typically used in switching circuits.
  9. Is the NSS12201LT1G transistor suitable for high-reliability applications?
    Yes, the NSS12201LT1G is designed for high reliability and durability.
  10. Where can I find detailed specifications for the NSS12201LT1G transistor?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser, RS Components, and LCSC.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:90mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
Power - Max:460 mW
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.48
1,286

Please send RFQ , we will respond immediately.

Similar Products

Part Number NSS12201LT1G NSS1C201LT1G NSS12200LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 12 V 100 V 12 V
Vce Saturation (Max) @ Ib, Ic 90mV @ 200mA, 2A 150mV @ 200mA, 2A 180mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V 120 @ 500mA, 2V 250 @ 500mA, 2V
Power - Max 460 mW 490 mW 460 mW
Frequency - Transition 150MHz 110MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD