NSS1C201LT1G
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onsemi NSS1C201LT1G

Manufacturer No:
NSS1C201LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 2A SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The onsemi NSS1C201LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for various low-power and high-speed switching applications. It is housed in the compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. This transistor is optimized for general-purpose amplifier applications and is known for its low voltage drop and efficient energy control.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Base Voltage (Vcbo)100 V
Collector-Emitter Voltage (Vceo)100 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)3 A
Power Dissipation (Pd)490 mW
Transition Frequency (ft)110 MHz
PackageSOT-23-3 (TO-236)

Key Features

  • Low VCE(sat) for efficient energy control
  • High-speed switching capabilities
  • Compact SOT-23-3 (TO-236) surface mount package
  • Suitable for general-purpose amplifier applications
  • High collector current of 3 A and collector-base voltage of 100 V

Applications

The onsemi NSS1C201LT1G is versatile and can be used in a variety of applications, including:

  • Low voltage, high speed switching circuits
  • General-purpose amplifier circuits
  • Automotive and industrial control systems
  • Consumer electronics requiring efficient power management

Q & A

  1. What is the package type of the NSS1C201LT1G transistor?
    The NSS1C201LT1G transistor is housed in the SOT-23-3 (TO-236) surface mount package.
  2. What is the maximum collector current of the NSS1C201LT1G?
    The maximum collector current is 3 A.
  3. What is the transition frequency of the NSS1C201LT1G?
    The transition frequency is 110 MHz.
  4. What are the typical applications of the NSS1C201LT1G?
    It is used in low voltage, high speed switching circuits, general-purpose amplifier circuits, automotive and industrial control systems, and consumer electronics requiring efficient power management.
  5. What is the power dissipation of the NSS1C201LT1G?
    The power dissipation is 490 mW.
  6. Is the NSS1C201LT1G RoHS compliant?
    Yes, the NSS1C201LT1G is RoHS compliant.
  7. What is the collector-base voltage of the NSS1C201LT1G?
    The collector-base voltage is 100 V.
  8. What is the emitter-base voltage of the NSS1C201LT1G?
    The emitter-base voltage is 5 V.
  9. Why is the NSS1C201LT1G preferred for high-speed switching applications?
    It is preferred due to its low VCE(sat) and high transition frequency, making it efficient for high-speed switching.
  10. Where can I find detailed specifications for the NSS1C201LT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Mouser, Digi-Key, and RS Components.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:150mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:490 mW
Frequency - Transition:110MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Same Series
NSS1C201LT1G
NSS1C201LT1G
TRANS NPN 100V 2A SOT23-3

Similar Products

Part Number NSS1C201LT1G NSV1C201LT1G NSS12201LT1G NSS1C200LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 12 V 100 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 200mA, 2A 150mV @ 200mA, 2A 90mV @ 200mA, 2A 250mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V 120 @ 500mA, 2V 200 @ 500mA, 2V 120 @ 50mA, 2V
Power - Max 490 mW 490 mW 460 mW 490 mW
Frequency - Transition 110MHz 110MHz 150MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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