NDS7002A-F169
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onsemi NDS7002A-F169

Manufacturer No:
NDS7002A-F169
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS7002A-F169 is an N-channel enhancement mode field effect transistor (FET) produced by onsemi. This device is part of onsemi's high cell density DMOS technology family, designed to offer low on-state resistance, rugged reliability, and fast switching performance. The NDS7002A is particularly suited for low-voltage, low-current applications, making it a versatile component in various electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage - Continuous VGSS ±20 V
Gate-to-Source Voltage - Non-Repetitive (tp < 50 ms) VGSS ±40 V
Maximum Drain Current - Continuous ID 280 mA
Maximum Drain Current - Pulsed ID 1500 mA
Maximum Power Dissipation PD 300 mW
Operating and Storage Temperature Range TJ, TSTG −65 to 150 °C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Gate Threshold Voltage VGS(th) 1 to 2.5 V
Static Drain-Source On-Resistance RDS(on) 1.2 to 2 Ω
Drain-Source On-Voltage VDS(on) 0.6 to 1 V
Forward Transconductance gFS 80 to 320 mS

Key Features

  • High density cell design for low RDS(on)
  • Voltage controlled small signal switch
  • Rugged and reliable performance
  • High saturation current capability
  • ESD protection level: HBM > 100 V, CDM > 2 kV
  • Pb-free and halogen-free package

Applications

The NDS7002A is suitable for a variety of low-voltage, low-current applications, including:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications

Q & A

  1. What is the maximum drain-to-source voltage for the NDS7002A?

    The maximum drain-to-source voltage (VDSS) for the NDS7002A is 60 V.

  2. What is the continuous gate-to-source voltage rating for the NDS7002A?

    The continuous gate-to-source voltage (VGSS) rating is ±20 V.

  3. What is the maximum continuous drain current for the NDS7002A?

    The maximum continuous drain current (ID) is 280 mA.

  4. What is the thermal resistance, junction to ambient, for the NDS7002A?

    The thermal resistance, junction to ambient (RθJA), is 417 °C/W.

  5. What are the operating and storage temperature ranges for the NDS7002A?

    The operating and storage temperature range is −65 to 150 °C.

  6. What is the typical static drain-source on-resistance for the NDS7002A?

    The typical static drain-source on-resistance (RDS(on)) is 1.2 to 2 Ω.

  7. Does the NDS7002A have ESD protection? 100 V and CDM > 2 kV.

  8. Is the NDS7002A Pb-free and halogen-free?
  9. What are some common applications for the NDS7002A?
  10. What is the forward transconductance of the NDS7002A?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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