NDS0605
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onsemi NDS0605

Manufacturer No:
NDS0605
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 180MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS0605 is a P-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by onsemi using their proprietary high cell density DMOS technology. This device is designed to minimize on-state resistance, providing rugged and reliable performance along with fast switching capabilities. It is particularly suited for low voltage applications requiring a low current high side switch and can handle currents up to 1 A and voltages up to -60 V.

Key Specifications

Parameter Symbol Min Max Unit
Drain-Source Voltage VDSS -60 - -60 V
Gate-Source Voltage VGSS ±20 - ±20 V
Continuous Drain Current ID -0.18 - -0.18 A
Pulsed Drain Current ID -1 - -1 A
Maximum Power Dissipation PD 0.36 - 0.36 W
Operating and Storage Junction Temperature TJ, TSTG -55 to +150 - -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 350 - 350 °C/W
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V
Static Drain-Source On-Resistance RDS(on) - 1.0 5.0 Ω

Key Features

  • Voltage Controlled P-Channel Small Signal Switch
  • High Density Cell Design for Low RDS(on)
  • High Saturation Current
  • Pb-Free, Halide Free, and RoHS Compliant
  • Fast Switching Capabilities
  • Rugged and Reliable Performance

Applications

The NDS0605 is suitable for a variety of low voltage applications, including:

  • Low current high side switches
  • Power management circuits
  • Audio and video switching
  • General purpose switching applications

Q & A

  1. What is the maximum drain-source voltage of the NDS0605?

    The maximum drain-source voltage (VDSS) is -60 V.

  2. What is the continuous drain current rating of the NDS0605?

    The continuous drain current (ID) is -0.18 A.

  3. What is the thermal resistance, junction-to-ambient, of the NDS0605?

    The thermal resistance, junction-to-ambient (RθJA), is 350 °C/W.

  4. Is the NDS0605 RoHS compliant?
  5. What is the gate threshold voltage range of the NDS0605?

    The gate threshold voltage (VGS(th)) ranges from -1 V to -3 V.

  6. What are the typical on-resistance values for the NDS0605?

    The static drain-source on-resistance (RDS(on)) is typically 1.0 Ω to 5.0 Ω at VGS = -10 V and ID = -0.5 A.

  7. What are the switching characteristics of the NDS0605?

    The turn-on delay time (td(on)) is 2.5 ns to 5 ns, and the turn-off delay time (td(off)) is 10 ns to 20 ns.

  8. What is the maximum power dissipation of the NDS0605?

    The maximum power dissipation (PD) is 0.36 W.

  9. What is the operating temperature range of the NDS0605?

    The operating and storage junction temperature range is -55°C to +150°C.

  10. What package type is the NDS0605 available in?

    The NDS0605 is available in the SOT-23 (TO-236) package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:79 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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