NDF08N50ZG
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onsemi NDF08N50ZG

Manufacturer No:
NDF08N50ZG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 500V 8.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDF08N50ZG is an N-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high voltage handling. This device is part of the TO-220FP package family and is Pb-free, halogen-free, and RoHS compliant. It features a drain-to-source voltage (VDSS) of 500 V and a continuous drain current (ID) of up to 8.5 A at 25°C. The MOSFET is optimized for low gate charge, ESD protection, and 100% avalanche testing, making it suitable for a wide range of power management and switching applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS500V
Continuous Drain Current (TJ = 25°C)ID8.5A
Continuous Drain Current (TA = 100°C)ID5.4A
Pulsed Drain Current (VGS @ 10 V)IDM34A
Power DissipationPD35W
Gate-to-Source VoltageVGS±30V
Single Pulse Avalanche EnergyEAS190mJ
ESD (HBM)Vesd3500V
RMS Isolation VoltageVISO4500V
Maximum Junction and Storage TemperatureTJ, Tstg-55 to 150°C
Maximum Temperature for Soldering LeadsTL260°C
On-Resistance (VGS = 10 V, ID = 3.6 A)RDS(on)0.69 - 0.85Ω
Gate Threshold VoltageVGS(th)3.0 - 4.5V

Key Features

  • Low On-Resistance: The NDF08N50ZG offers a low RDS(on) of 0.69 - 0.85 Ω, ensuring minimal power loss during operation.
  • Low Gate Charge: This MOSFET features low gate charge, which is beneficial for high-frequency switching applications.
  • ESD Diode-Protected Gate: The device includes ESD protection to enhance reliability and durability.
  • 100% Avalanche Tested: Ensures the device can withstand high-energy pulses.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.

Applications

The NDF08N50ZG is suitable for various high-power applications, including:

  • Power Supplies: High-efficiency DC-DC converters and power supply units.
  • Motor Control: Inverter and motor drive systems.
  • Industrial Automation: Control circuits and power management in industrial automation systems.
  • Automotive Systems: High-voltage applications in automotive electronics.
  • Renewable Energy Systems: Solar and wind power conversion systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NDF08N50ZG? The maximum drain-to-source voltage (VDSS) is 500 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current (ID) is up to 8.5 A at 25°C.
  3. What is the maximum power dissipation of the NDF08N50ZG? The maximum power dissipation (PD) is 35 W.
  4. Is the NDF08N50ZG ESD protected? Yes, the device includes ESD diode protection for the gate.
  5. What is the operating junction temperature range? The operating junction temperature range is -55°C to 150°C.
  6. Is the NDF08N50ZG RoHS compliant? Yes, the device is Pb-free, halogen-free, and RoHS compliant.
  7. What is the typical on-resistance of the NDF08N50ZG? The typical on-resistance (RDS(on)) is 0.85 Ω at VGS = 10 V and ID = 3.6 A.
  8. What are the key features of the NDF08N50ZG? Key features include low on-resistance, low gate charge, ESD protection, and 100% avalanche testing.
  9. In what types of applications is the NDF08N50ZG commonly used? Common applications include power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.
  10. What is the maximum temperature for soldering leads? The maximum temperature for soldering leads is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1095 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
NDF08N50ZH
NDF08N50ZH
MOSFET N-CH 500V 8.5A TO220FP

Similar Products

Part Number NDF08N50ZG NDF08N60ZG NDF08N50ZH NDF05N50ZG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 8.4A (Tc) 8.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 850mOhm @ 3.6A, 10V 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 39 nC @ 10 V 46 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1095 pF @ 25 V 1140 pF @ 25 V 1095 pF @ 25 V 632 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 36W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220-2 Full Pack TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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