NDF08N50ZG
  • Share:

onsemi NDF08N50ZG

Manufacturer No:
NDF08N50ZG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 500V 8.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDF08N50ZG is an N-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high voltage handling. This device is part of the TO-220FP package family and is Pb-free, halogen-free, and RoHS compliant. It features a drain-to-source voltage (VDSS) of 500 V and a continuous drain current (ID) of up to 8.5 A at 25°C. The MOSFET is optimized for low gate charge, ESD protection, and 100% avalanche testing, making it suitable for a wide range of power management and switching applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS500V
Continuous Drain Current (TJ = 25°C)ID8.5A
Continuous Drain Current (TA = 100°C)ID5.4A
Pulsed Drain Current (VGS @ 10 V)IDM34A
Power DissipationPD35W
Gate-to-Source VoltageVGS±30V
Single Pulse Avalanche EnergyEAS190mJ
ESD (HBM)Vesd3500V
RMS Isolation VoltageVISO4500V
Maximum Junction and Storage TemperatureTJ, Tstg-55 to 150°C
Maximum Temperature for Soldering LeadsTL260°C
On-Resistance (VGS = 10 V, ID = 3.6 A)RDS(on)0.69 - 0.85Ω
Gate Threshold VoltageVGS(th)3.0 - 4.5V

Key Features

  • Low On-Resistance: The NDF08N50ZG offers a low RDS(on) of 0.69 - 0.85 Ω, ensuring minimal power loss during operation.
  • Low Gate Charge: This MOSFET features low gate charge, which is beneficial for high-frequency switching applications.
  • ESD Diode-Protected Gate: The device includes ESD protection to enhance reliability and durability.
  • 100% Avalanche Tested: Ensures the device can withstand high-energy pulses.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.

Applications

The NDF08N50ZG is suitable for various high-power applications, including:

  • Power Supplies: High-efficiency DC-DC converters and power supply units.
  • Motor Control: Inverter and motor drive systems.
  • Industrial Automation: Control circuits and power management in industrial automation systems.
  • Automotive Systems: High-voltage applications in automotive electronics.
  • Renewable Energy Systems: Solar and wind power conversion systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NDF08N50ZG? The maximum drain-to-source voltage (VDSS) is 500 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current (ID) is up to 8.5 A at 25°C.
  3. What is the maximum power dissipation of the NDF08N50ZG? The maximum power dissipation (PD) is 35 W.
  4. Is the NDF08N50ZG ESD protected? Yes, the device includes ESD diode protection for the gate.
  5. What is the operating junction temperature range? The operating junction temperature range is -55°C to 150°C.
  6. Is the NDF08N50ZG RoHS compliant? Yes, the device is Pb-free, halogen-free, and RoHS compliant.
  7. What is the typical on-resistance of the NDF08N50ZG? The typical on-resistance (RDS(on)) is 0.85 Ω at VGS = 10 V and ID = 3.6 A.
  8. What are the key features of the NDF08N50ZG? Key features include low on-resistance, low gate charge, ESD protection, and 100% avalanche testing.
  9. In what types of applications is the NDF08N50ZG commonly used? Common applications include power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.
  10. What is the maximum temperature for soldering leads? The maximum temperature for soldering leads is 260°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1095 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$0.47
1,106

Please send RFQ , we will respond immediately.

Same Series
NDF08N50ZH
NDF08N50ZH
MOSFET N-CH 500V 8.5A TO220FP

Similar Products

Part Number NDF08N50ZG NDF08N60ZG NDF08N50ZH NDF05N50ZG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 8.4A (Tc) 8.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 850mOhm @ 3.6A, 10V 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 39 nC @ 10 V 46 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1095 pF @ 25 V 1140 pF @ 25 V 1095 pF @ 25 V 632 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 35W (Tc) 36W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220-2 Full Pack TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC