MUR2100ERLG
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onsemi MUR2100ERLG

Manufacturer No:
MUR2100ERLG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1000V 2A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR2100ERLG is a high-performance ultrafast rectifier from ON Semiconductor, part of the 'E' Series with high reverse energy capability. This device is specifically designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a robust set of characteristics that make it ideal for demanding applications requiring fast recovery times and high reliability.

Key Specifications

RatingSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM1000V
Average Rectified Forward CurrentIF(AV)2.0 @ TA = 35°CA
Non-Repetitive Peak Surge CurrentIFSM35A
Operating Junction Temperature and Storage Temperature RangeTJ, Tstg−65 to +175°C
Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 150°C)VF1.75V
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs)trr100ns
Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/μs)tfr75ns
Controlled Avalanche EnergyWAVAL20mJ

Key Features

  • Ultrafast 75 nanosecond recovery time
  • 20 mjoules Avalanche Energy Guaranteed
  • Excellent protection against voltage transients in switching inductive load circuits
  • Low forward voltage and low leakage current
  • High temperature glass passivated junction with an operating junction temperature of 175°C
  • Case: Epoxy, molded; Weight: approximately 0.4 grams; Finish: All external surfaces corrosion resistant and terminal leads readily solderable
  • Pb-Free device

Applications

The MUR2100ERLG is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes in inductive load circuits

Q & A

  1. What is the peak repetitive reverse voltage of the MUR2100ERLG?
    The peak repetitive reverse voltage is 1000 V.
  2. What is the average rectified forward current of the MUR2100ERLG at 35°C?
    The average rectified forward current is 2.0 A at 35°C.
  3. What is the maximum non-repetitive peak surge current of the MUR2100ERLG?
    The maximum non-repetitive peak surge current is 35 A.
  4. What is the operating junction temperature range of the MUR2100ERLG?
    The operating junction temperature range is −65 to +175°C.
  5. What is the maximum instantaneous forward voltage of the MUR2100ERLG at 2.0 A and 150°C?
    The maximum instantaneous forward voltage is 1.75 V.
  6. What is the maximum reverse recovery time of the MUR2100ERLG?
    The maximum reverse recovery time is 100 ns.
  7. What is the controlled avalanche energy of the MUR2100ERLG?
    The controlled avalanche energy is 20 mjoules.
  8. Is the MUR2100ERLG a Pb-Free device?
    Yes, the MUR2100ERLG is a Pb-Free device.
  9. What are the typical applications of the MUR2100ERLG?
    The typical applications include switching power supplies, inverters, and free-wheeling diodes in inductive load circuits.
  10. What is the weight and finish of the MUR2100ERLG?
    The weight is approximately 0.4 grams, and the finish is all external surfaces corrosion resistant with terminal leads readily solderable.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
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Same Series
MUR2100ERLG
MUR2100ERLG
DIODE GEN PURP 1000V 2A AXIAL

Similar Products

Part Number MUR2100ERLG MUR4100ERLG MUR2100ERL
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 2A 4A 2A
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 2 A 1.85 V @ 4 A 2.2 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 25 µA @ 1000 V 10 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-201AA, DO-27, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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