MUR4100ERLG
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onsemi MUR4100ERLG

Manufacturer No:
MUR4100ERLG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1000V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR4100ERLG is a high-performance ultrafast recovery rectifier produced by onsemi. This device is part of the MUR Series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MUR4100ERLG features advanced characteristics that make it suitable for demanding applications requiring high efficiency and reliability.

Key Specifications

Attribute Value Unit
Average Rectified Current (Max) 4 A
Reverse Voltage (Max) 1000 V
Reverse Current (Max) 25 µA
Forward Voltage (Max) 1.85 V
Reverse Recovery Time (Max) 75 ns
Operating Junction Temperature -65 to +175 °C
Package Style CASE 267
Mounting Method Through Hole
Avalanche Energy Guaranteed 20 mJ
Non-Repetitive Peak Surge Current 70 A

Key Features

  • Ultrafast recovery times of 25 ns, 50 ns, and 75 ns
  • 175°C operating junction temperature
  • Low forward voltage (1.85 V)
  • Low leakage current (25 µA)
  • High temperature glass passivated junction
  • Reverse voltage up to 1000 V
  • Excellent protection against voltage transients in switching inductive load circuits
  • Pb-free packages
  • Corrosion-resistant external surfaces and readily solderable terminal leads
  • Lead temperature for soldering purposes: 260°C max for 10 seconds

Applications

The MUR4100ERLG is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes

Q & A

  1. What is the maximum average rectified current of the MUR4100ERLG?

    The maximum average rectified current is 4 A.

  2. What is the maximum reverse voltage of the MUR4100ERLG?

    The maximum reverse voltage is 1000 V.

  3. What is the forward voltage of the MUR4100ERLG?

    The forward voltage is 1.85 V.

  4. What is the reverse recovery time of the MUR4100ERLG?

    The reverse recovery time is up to 75 ns.

  5. What is the operating junction temperature range of the MUR4100ERLG?

    The operating junction temperature range is -65 to +175°C.

  6. What type of package does the MUR4100ERLG come in?

    The MUR4100ERLG comes in a CASE 267 package with a through-hole mounting method.

  7. Is the MUR4100ERLG Pb-free?
  8. What is the avalanche energy guaranteed for the MUR4100ERLG?

    The avalanche energy guaranteed is 20 mJ.

  9. What is the non-repetitive peak surge current of the MUR4100ERLG?

    The non-repetitive peak surge current is 70 A.

  10. How many units are typically shipped in a reel for the MUR4100ERLG?

    1500 units are typically shipped in a reel.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
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In Stock

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Similar Products

Part Number MUR4100ERLG MUR2100ERLG MUR4100ERL
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 4A 2A 4A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 4 A 2.2 V @ 2 A 1.85 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V 10 µA @ 1000 V 25 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-204AL, DO-41, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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