MUR4100ERL
  • Share:

onsemi MUR4100ERL

Manufacturer No:
MUR4100ERL
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR4100ERL is an ultrafast recovery rectifier from onsemi, part of the Ultrafast 'E' Series. This device is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features high reverse energy capability and is optimized for applications requiring fast recovery times and high reliability.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Working Peak Reverse Voltage VRWM 1000 V
Average Rectified Forward Current IF(AV) 4.0 A
Non-Repetitive Peak Surge Current IFSM 70 A
Operating Junction Temperature TJ -65 to +175 °C
Reverse Recovery Time t_rr 75 ns
Maximum Instantaneous Forward Voltage V_F 1.85 V
Maximum Reverse Current I_R 0.9 mA
Avalanche Energy Guaranteed W_AVAL 20 mJ
Package Type Axial Lead-2
Lead Temperature for Soldering 260°C Max. for 10 Seconds

Key Features

  • Ultrafast 75 nanosecond recovery time
  • High reverse energy capability with 20 mJ avalanche energy guaranteed
  • Excellent protection against voltage transients in switching inductive load circuits
  • Low forward voltage and low leakage current
  • High temperature glass passivated junction
  • Operating junction temperature up to 175°C
  • Corrosion-resistant epoxy molded case with readily solderable terminal leads

Applications

The MUR4100ERL is suitable for various applications including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes in high-frequency switching circuits
  • High-reliability power conversion systems

Q & A

  1. What is the peak repetitive reverse voltage of the MUR4100ERL?

    The peak repetitive reverse voltage (VRRM) is 1000 volts.

  2. What is the average rectified forward current rating of the MUR4100ERL?

    The average rectified forward current (IF(AV)) is 4.0 amps.

  3. What is the reverse recovery time of the MUR4100ERL?

    The reverse recovery time (t_rr) is 75 nanoseconds.

  4. What is the maximum operating junction temperature of the MUR4100ERL?

    The operating junction temperature range is -65 to +175°C.

  5. What is the avalanche energy capability of the MUR4100ERL?

    The avalanche energy guaranteed is 20 mJ.

  6. What type of package does the MUR4100ERL come in?

    The MUR4100ERL comes in an axial lead-2 package.

  7. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C maximum for 10 seconds.

  8. Is the MUR4100ERL Pb-free?

    Yes, the MUR4100ERL is a Pb-free device.

  9. What are some common applications for the MUR4100ERL?

    Common applications include switching power supplies, inverters, and free-wheeling diodes in high-frequency switching circuits.

  10. What is the maximum non-repetitive peak surge current of the MUR4100ERL?

    The non-repetitive peak surge current (IFSM) is 70 amps.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
83

Please send RFQ , we will respond immediately.

Same Series
MUR480ESG
MUR480ESG
DIODE GEN PURP 800V 4A DO201AD
MUR480ERLG
MUR480ERLG
DIODE GEN PURP 800V 4A AXIAL
MUR4100ERLG
MUR4100ERLG
DIODE GEN PURP 1000V 4A DO201AD
MUR480E
MUR480E
DIODE GEN PURP 800V 4A DO201AD
MUR4100ERL
MUR4100ERL
DIODE GEN PURP 1KV 4A DO201AD
MUR480EG
MUR480EG
DIODE GEN PURP 800V 4A AXIAL

Similar Products

Part Number MUR4100ERL MUR4100ERLG MUR2100ERL
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 4A 4A 2A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 4 A 1.85 V @ 4 A 2.2 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V 25 µA @ 1000 V 10 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4