Overview
The MTB30P06V is a P-Channel Power MOSFET produced by onsemi, designed for high-performance applications requiring low voltage and high-speed switching. This device is particularly suited for use in power supplies, converters, and power motor controls, especially in bridge circuits where diode speed and commutating safe operating areas are critical. The MTB30P06V is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage (Continuous) | VGS | ±15 | Vdc |
| Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms) | VGSM | ±25 | Vdc |
| Drain Current (Continuous @ 25°C) | ID | 30 | A |
| Drain Current (Continuous @ 100°C) | ID | 19 | A |
| Single Pulse Drain Current (tp ≤ 10 μs) | IDM | 105 | A |
| Total Power Dissipation @ 25°C | PD | 125 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
| Static Drain-Source On-Resistance (VGS = 10 V, ID = 15 A) | RDS(on) | 0.067 - 0.08 | Ω |
| Gate Threshold Voltage (VDS = VGS, ID = 250 μA) | VGS(th) | 2.0 - 2.6 | Vdc |
| Single Pulse Drain-to-Source Avalanche Energy (Starting TJ = 25°C) | EAS | 450 | mJ |
Key Features
- Avalanche Energy Specified: The MTB30P06V is designed to withstand high energy in avalanche and commutation modes.
- IDSS and VDS(on) Specified at Elevated Temperature: Ensures reliable performance across a range of temperatures.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive standards for reliability and quality.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Low On-Resistance: RDS(on) of 0.067 - 0.08 Ω at VGS = 10 V, ID = 15 A.
- High Speed Switching: Suitable for applications requiring fast switching times.
Applications
- Power Supplies: Ideal for use in DC-DC converters and other power supply applications.
- Converters: Suitable for use in various types of converters, including buck, boost, and buck-boost converters.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Particularly well-suited for bridge configurations where diode speed and safe operating areas are critical.
Q & A
- What is the maximum drain-to-source voltage of the MTB30P06V?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 30 A.
- Is the MTB30P06V AEC-Q101 qualified?
- What is the typical on-resistance of the MTB30P06V?
The typical on-resistance (RDS(on)) is 0.067 - 0.08 Ω at VGS = 10 V, ID = 15 A.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 450 mJ.
- What is the operating temperature range of the MTB30P06V?
The operating and storage temperature range is -55 to 175 °C.
- Is the MTB30P06V Pb-free and RoHS compliant?
- What are the typical switching times for the MTB30P06V?
The turn-on delay time (td(on)) is typically 14.7 ns, the rise time (tr) is typically 25.9 ns, the turn-off delay time (td(off)) is typically 98 ns, and the fall time (tf) is typically 52.4 ns.
- What is the maximum gate-to-source voltage?
The maximum continuous gate-to-source voltage (VGS) is ±15 Vdc.
- What is the total power dissipation at 25°C?
The total power dissipation (PD) at 25°C is 125 W.
