MMBTA63LT1G
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onsemi MMBTA63LT1G

Manufacturer No:
MMBTA63LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP DARL 30V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA63LT1G is a Darlington transistor produced by onsemi, designed to provide high current gain and low base current requirements. This component is part of the MMBTA63 series and is known for its reliability and performance in various electronic circuits. The Darlington configuration allows for higher current handling capabilities compared to single bipolar transistors, making it suitable for a range of applications.

Key Specifications

ParameterValue
Emitter-Base Voltage (VEBO)10 V
Collector-Base Voltage (VCBO)30 V
Maximum DC Collector Current500 mA
Junction and Storage Temperature (TJ, Tstg)-55 to +150°C
Thermal Resistance, Junction-to-Ambient (RθJA)417 °C/W

Key Features

  • High current gain due to Darlington configuration
  • Low base current requirements
  • High collector current handling up to 500 mA
  • Wide operating temperature range from -55°C to +150°C
  • High thermal resistance, Junction-to-Ambient (RθJA) of 417 °C/W

Applications

The MMBTA63LT1G Darlington transistor is versatile and can be used in various applications, including:

  • Power amplifiers and switches
  • Relay drivers
  • Motor control circuits
  • High-current LED drivers
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the maximum DC collector current of the MMBTA63LT1G?
    The maximum DC collector current is 500 mA.
  2. What is the emitter-base voltage (VEBO) of the MMBTA63LT1G?
    The emitter-base voltage (VEBO) is 10 V.
  3. What is the collector-base voltage (VCBO) of the MMBTA63LT1G?
    The collector-base voltage (VCBO) is 30 V.
  4. What is the thermal resistance, Junction-to-Ambient (RθJA), of the MMBTA63LT1G?
    The thermal resistance, Junction-to-Ambient (RθJA), is 417 °C/W.
  5. What is the operating temperature range of the MMBTA63LT1G?
    The operating temperature range is from -55°C to +150°C.
  6. Why is the MMBTA63LT1G used in power amplifiers and switches?
    The MMBTA63LT1G is used in power amplifiers and switches due to its high current gain and low base current requirements.
  7. Can the MMBTA63LT1G be used in motor control circuits?
    Yes, the MMBTA63LT1G can be used in motor control circuits due to its high current handling capabilities.
  8. Is the MMBTA63LT1G suitable for high-current LED drivers?
    Yes, the MMBTA63LT1G is suitable for high-current LED drivers.
  9. What is the Darlington configuration in the MMBTA63LT1G?
    The Darlington configuration in the MMBTA63LT1G allows for higher current gain by cascading two bipolar transistors.
  10. Is the MMBTA63LT1G still in production?
    No, the MMBTA63LT1G is listed as obsolete and is not currently sold by some distributors.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 100mA, 5V
Power - Max:225 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA63LT1G MMBTA64LT1G MMBTA93LT1G MMBTA13LT1G MMBTA43LT1G MMBTA63LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete Obsolete
Transistor Type PNP - Darlington PNP - Darlington PNP NPN - Darlington NPN -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 300 mA 50 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 200 V 30 V 200 V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 500mV @ 2mA, 20mA 1.5V @ 100µA, 100mA 500mV @ 2mA, 20mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 250nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 100mA, 5V 20000 @ 100mA, 5V 25 @ 30mA, 10V 10000 @ 100mA, 5V 40 @ 30mA, 10V -
Power - Max 225 mW 225 mW 300 mW 225 mW 225 mW -
Frequency - Transition 125MHz 125MHz 50MHz 125MHz 50MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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