Overview
The MMBTA64LT1G is a PNP Silicon Darlington transistor manufactured by onsemi. This device is designed for various applications requiring high current gain and low power consumption. It is housed in a compact SOT-23 package, making it suitable for surface mount applications. The MMBTA64LT1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCES | -30 | Vdc |
Collector-Base Voltage | VCBO | -30 | Vdc |
Emitter-Base Voltage | VEBO | -10 | Vdc |
Collector Current - Continuous | IC | -500 | mAdc |
Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) | hFE | 10,000 | - |
DC Current Gain (IC = -100 mAdc, VCE = -5.0 Vdc) | hFE | 20,000 | - |
Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) | VCE(sat) | -1.5 | Vdc |
Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) | VBE(on) | -2.0 | Vdc |
Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) | fT | 125 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain: 10,000 @ 10 mA @ 5 V and 20,000 @ 100 mA @ 5 V.
- Low collector-emitter saturation voltage: -1.5 V @ 0.1 mA @ 100 mA.
- Compact SOT-23 package for surface mount applications.
- Low rDS(on) for higher efficiency and extended battery life.
- Miniature package saves board space.
Applications
The MMBTA64LT1G is designed for use in various switching applications, including:
- Print hammer drivers
- Relay drivers
- Solenoid drivers
- Lamp drivers
- Automotive systems requiring high reliability and performance.
Q & A
- What is the maximum collector-emitter voltage of the MMBTA64LT1G?
The maximum collector-emitter voltage is -30 Vdc.
- What is the maximum continuous collector current of the MMBTA64LT1G?
The maximum continuous collector current is 500 mA.
- What is the DC current gain of the MMBTA64LT1G?
The DC current gain is 10,000 @ 10 mA @ 5 V and 20,000 @ 100 mA @ 5 V.
- What is the collector-emitter saturation voltage of the MMBTA64LT1G?
The collector-emitter saturation voltage is -1.5 V @ 0.1 mA @ 100 mA.
- What is the thermal resistance, junction-to-ambient of the MMBTA64LT1G?
The thermal resistance, junction-to-ambient is 417 °C/W.
- What is the operating temperature range of the MMBTA64LT1G?
The operating temperature range is -55 to +150 °C.
- Is the MMBTA64LT1G RoHS compliant?
- What package type does the MMBTA64LT1G use?
- What are some typical applications of the MMBTA64LT1G?
- Is the MMBTA64LT1G suitable for automotive applications?