MMBTA64LT1G
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onsemi MMBTA64LT1G

Manufacturer No:
MMBTA64LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP DARL 30V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA64LT1G is a PNP Silicon Darlington transistor manufactured by onsemi. This device is designed for various applications requiring high current gain and low power consumption. It is housed in a compact SOT-23 package, making it suitable for surface mount applications. The MMBTA64LT1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCES -30 Vdc
Collector-Base Voltage VCBO -30 Vdc
Emitter-Base Voltage VEBO -10 Vdc
Collector Current - Continuous IC -500 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) hFE 10,000 -
DC Current Gain (IC = -100 mAdc, VCE = -5.0 Vdc) hFE 20,000 -
Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) VCE(sat) -1.5 Vdc
Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) VBE(on) -2.0 Vdc
Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT 125 MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • High DC current gain: 10,000 @ 10 mA @ 5 V and 20,000 @ 100 mA @ 5 V.
  • Low collector-emitter saturation voltage: -1.5 V @ 0.1 mA @ 100 mA.
  • Compact SOT-23 package for surface mount applications.
  • Low rDS(on) for higher efficiency and extended battery life.
  • Miniature package saves board space.

Applications

The MMBTA64LT1G is designed for use in various switching applications, including:

  • Print hammer drivers
  • Relay drivers
  • Solenoid drivers
  • Lamp drivers
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBTA64LT1G?

    The maximum collector-emitter voltage is -30 Vdc.

  2. What is the maximum continuous collector current of the MMBTA64LT1G?

    The maximum continuous collector current is 500 mA.

  3. What is the DC current gain of the MMBTA64LT1G?

    The DC current gain is 10,000 @ 10 mA @ 5 V and 20,000 @ 100 mA @ 5 V.

  4. What is the collector-emitter saturation voltage of the MMBTA64LT1G?

    The collector-emitter saturation voltage is -1.5 V @ 0.1 mA @ 100 mA.

  5. What is the thermal resistance, junction-to-ambient of the MMBTA64LT1G?

    The thermal resistance, junction-to-ambient is 417 °C/W.

  6. What is the operating temperature range of the MMBTA64LT1G?

    The operating temperature range is -55 to +150 °C.

  7. Is the MMBTA64LT1G RoHS compliant?
  8. What package type does the MMBTA64LT1G use?
  9. What are some typical applications of the MMBTA64LT1G?
  10. Is the MMBTA64LT1G suitable for automotive applications?

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
Power - Max:225 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

$0.21
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Similar Products

Part Number MMBTA64LT1G MMBTA64LT3G MMBTA14LT1G MMBTA63LT1G MMBTA64LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington -
Current - Collector (Ic) (Max) 500 mA 500 mA 300 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V 20000 @ 100mA, 5V 20000 @ 100mA, 5V 5000 @ 100mA, 5V -
Power - Max 225 mW 225 mW 225 mW 225 mW -
Frequency - Transition 125MHz 125MHz 125MHz 125MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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