Overview
The MMBTA14LT1G is a Darlington NPN bipolar junction transistor (BJT) produced by onsemi. This transistor is packaged in a SOT-23-3 (TO-236) surface mount configuration, making it suitable for a wide range of applications requiring high current gain and low noise. The device is designed to operate with a maximum collector-emitter voltage of 30V and a maximum DC collector current of 300 mA, making it versatile for various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector-Base Voltage (VCBO) | 30 V |
| Maximum DC Collector Current | 300 mA |
| Maximum Collector Cut-off Current | 100 nA (Typical) |
| Power Dissipation (Pd) | 225 mW |
| Transition Frequency (fT) | 125 MHz |
| Package Type | SOT-23-3 (TO-236) |
Key Features
- High current gain due to Darlington configuration
- Low noise operation
- Surface mount SOT-23-3 package for compact designs
- Maximum collector-emitter voltage of 30V and maximum DC collector current of 300 mA
- Transition frequency of 125 MHz, suitable for high-frequency applications
- Low power dissipation of 225 mW
Applications
The MMBTA14LT1G is suitable for a variety of applications including:
- Amplifier circuits requiring high current gain
- Switching circuits in power supplies and motor control
- Audio and signal processing circuits where low noise is critical
- Automotive and industrial control systems
- General-purpose electronic circuits needing a reliable and compact transistor solution
Q & A
- What is the maximum collector-emitter voltage of the MMBTA14LT1G?
The maximum collector-emitter voltage is 30 V. - What is the maximum DC collector current of the MMBTA14LT1G?
The maximum DC collector current is 300 mA. - What is the package type of the MMBTA14LT1G?
The package type is SOT-23-3 (TO-236). - What is the transition frequency of the MMBTA14LT1G?
The transition frequency is 125 MHz. - What is the power dissipation of the MMBTA14LT1G?
The power dissipation is 225 mW. - Is the MMBTA14LT1G suitable for high-frequency applications?
Yes, it is suitable due to its high transition frequency. - What are some common applications of the MMBTA14LT1G?
Common applications include amplifier circuits, switching circuits, audio and signal processing, automotive and industrial control systems, and general-purpose electronic circuits. - What is the emitter-base voltage (VEBO) of the MMBTA14LT1G?
The emitter-base voltage (VEBO) is 10 V. - Is the MMBTA14LT1G a Darlington transistor?
Yes, it is a Darlington NPN bipolar junction transistor. - What is the typical collector cut-off current of the MMBTA14LT1G?
The typical collector cut-off current is 100 nA.
