Overview
The SMMBTA13LT1G is a Darlington amplifier transistor produced by onsemi. This NPN silicon transistor is designed for high-current gain applications and is available in a SOT-23 (TO-236) package. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of electronic systems. The device is AEC-Q101 qualified and PPAP capable, which ensures its reliability and performance in automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | 30 | Vdc |
| Collector-Base Voltage | VCBO | 30 | Vdc |
| Emitter-Base Voltage | VEBO | 10 | Vdc |
| Collector Current - Continuous | IC | 300 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) | hFE | 5000 - 10000 | - |
| Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) | VCE(sat) | -1.5 | Vdc |
| Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) | VBE | -2.0 | Vdc |
| Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) | fT | 125 | MHz |
Key Features
- S Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) ranging from 5000 to 10000.
- Low collector-emitter saturation voltage (VCE(sat)) of 1.5 V.
- High current-gain - bandwidth product (fT) of 125 MHz.
- Wide operating temperature range from -55°C to +150°C.
Applications
- Automotive systems requiring high reliability and performance.
- Power amplifiers and switching circuits.
- High-current gain applications in industrial and consumer electronics.
- Relay drivers and motor control circuits.
- General-purpose amplification in various electronic devices.
Q & A
- What is the collector-emitter voltage rating of the SMMBTA13LT1G transistor?
The collector-emitter voltage (VCES) is rated at 30 Vdc.
- What is the maximum continuous collector current for this transistor?
The maximum continuous collector current (IC) is 300 mAdc.
- Is the SMMBTA13LT1G transistor RoHS compliant?
- What is the DC current gain (hFE) of the SMMBTA13LT1G transistor?
The DC current gain (hFE) ranges from 5000 to 10000.
- What is the thermal resistance, junction-to-ambient (RθJA), for the FR-5 board?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W for the FR-5 board.
- What are the typical applications for the SMMBTA13LT1G transistor?
Typical applications include automotive systems, power amplifiers, switching circuits, relay drivers, and general-purpose amplification.
- What is the current-gain - bandwidth product (fT) of the SMMBTA13LT1G transistor?
The current-gain - bandwidth product (fT) is 125 MHz.
- What is the base-emitter on voltage (VBE) for the SMMBTA13LT1G transistor?
The base-emitter on voltage (VBE) is up to 2.0 Vdc.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SMMBTA13LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is up to 1.5 Vdc.
- What is the operating temperature range for the SMMBTA13LT1G transistor?
The operating temperature range is from -55°C to +150°C.
