Overview
The MMBTA13LT1G is a Darlington amplifier transistor produced by onsemi. This NPN silicon transistor is designed for high-current gain applications and is available in a SOT-23 (TO-236) package. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of electronic devices. The device is also AEC-Q101 qualified and PPAP capable, which ensures its reliability in automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | 30 | Vdc |
| Collector-Base Voltage | VCBO | 30 | Vdc |
| Emitter-Base Voltage | VEBO | 10 | Vdc |
| Collector Current - Continuous | IC | 300 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) | hFE | 5000 - 10,000 | - |
| Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) | VCE(sat) | -1.5 | Vdc |
| Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) | VBE | -2.0 | Vdc |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding applications.
- Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
- High DC Current Gain: hFE ranges from 5000 to 10,000, making it suitable for high-current gain applications.
- Low Collector-Emitter Saturation Voltage: VCE(sat) of 1.5 Vdc, which is beneficial for low-voltage applications.
- Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
- Small-Signal Characteristics: Includes a current-gain-bandwidth product of 125 MHz.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Industrial Control Systems: Used in industrial control circuits where high reliability and current gain are required.
- Consumer Electronics: Can be used in consumer electronic devices that require low-voltage and high-current gain transistors.
- Power Management: Useful in power management circuits where efficient current handling is necessary.
Q & A
- What is the maximum collector-emitter voltage for the MMBTA13LT1G transistor?
The maximum collector-emitter voltage (VCES) is 30 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 300 mAdc.
- Is the MMBTA13LT1G transistor RoHS compliant?
- What is the DC current gain range for the MMBTA13LT1G transistor?
The DC current gain (hFE) ranges from 5000 to 10,000.
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 1.5 Vdc.
- What is the base-emitter on voltage for the MMBTA13LT1G transistor?
The base-emitter on voltage (VBE) is 2.0 Vdc.
- What is the thermal resistance, junction-to-ambient, for the FR-5 board?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W for the FR-5 board.
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is from -55°C to +150°C.
- Is the MMBTA13LT1G suitable for automotive applications?
- What package type is the MMBTA13LT1G transistor available in?
The MMBTA13LT1G is available in a SOT-23 (TO-236) package.
