Overview
The SMMBTA64LT1G is a PNP Darlington transistor manufactured by ON Semiconductor. This device is part of the MMBTA64LT1G series and is designed for high-current amplification and switching applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The transistor is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | -30 | - | Vdc |
| Collector-Base Voltage | VCBO | -30 | - | Vdc |
| Emitter-Base Voltage | VEBO | -10 | - | Vdc |
| Collector Current - Continuous | IC | -500 | - | mAdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 | - | Vdc |
| Collector Cutoff Current | ICBO | - | -100 | nAdc |
| Emitter Cutoff Current | IEBO | - | -100 | nAdc |
| DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) | hFE | 10,000 | - | - |
| DC Current Gain (IC = -100 mAdc, VCE = -5.0 Vdc) | hFE | 20,000 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | -1.5 | Vdc |
| Base-Emitter On Voltage | VBE(on) | - | -2.0 | Vdc |
| Current-Gain - Bandwidth Product | fT | 125 | - | MHz |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | - | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | - | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- S prefix for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High DC current gain (hFE) of up to 20,000.
- Low collector-emitter saturation voltage (VCE(sat)) of -1.5 Vdc.
- Low base-emitter on voltage (VBE(on)) of -2.0 Vdc.
- High current-gain - bandwidth product (fT) of 125 MHz.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- High-current amplification: Ideal for applications requiring high current gain and low saturation voltage.
- Switching circuits: Used in switching applications where high current handling and low on-state voltage are necessary.
- Industrial control systems: Can be used in industrial control systems that require reliable and high-performance switching and amplification.
Q & A
- What is the maximum collector-emitter voltage for the SMMBTA64LT1G transistor?
The maximum collector-emitter voltage (VCES) is -30 Vdc.
- What is the DC current gain (hFE) of the SMMBTA64LT1G transistor?
The DC current gain (hFE) is up to 20,000 for IC = -100 mAdc and VCE = -5.0 Vdc.
- Is the SMMBTA64LT1G transistor RoHS compliant?
Yes, the SMMBTA64LT1G transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the thermal resistance, junction-to-ambient (RθJA) for the SMMBTA64LT1G transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What are the junction and storage temperature ranges for the SMMBTA64LT1G transistor?
The junction and storage temperature ranges are -55 to +150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SMMBTA64LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is -1.5 Vdc.
- What is the base-emitter on voltage (VBE(on)) for the SMMBTA64LT1G transistor?
The base-emitter on voltage (VBE(on)) is -2.0 Vdc.
- What is the current-gain - bandwidth product (fT) for the SMMBTA64LT1G transistor?
The current-gain - bandwidth product (fT) is 125 MHz.
- Is the SMMBTA64LT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What are some common applications of the SMMBTA64LT1G transistor?
Common applications include automotive systems, high-current amplification, switching circuits, and industrial control systems.
