Overview
The MMBTA63LT1G is a PNP silicon Darlington transistor manufactured by ON Semiconductor. This device is part of the MMBTA63LT1G, MMBTA64LT1G, and SMMBTA64LT1G series, which are designed for high-current gain and low saturation voltage. The MMBTA63LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality and reliability standards. The transistor is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental regulations.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | -30 | Vdc |
| Collector-Base Voltage | VCBO | -30 | Vdc |
| Emitter-Base Voltage | VEBO | -10 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) | hFE | 5,000 to 10,000 | |
| Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) | VCE(sat) | -1.5 | Vdc |
| Base-Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) | VBE(on) | -2.0 | Vdc |
| Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) | fT | 125 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) ranging from 5,000 to 20,000 depending on the collector current.
- Low collector-emitter saturation voltage (VCE(sat)) of -1.5 Vdc.
- Low base-emitter on voltage (VBE(on)) of -2.0 Vdc.
- High current-gain - bandwidth product (fT) of 125 MHz.
- S Prefix for automotive and other applications requiring unique site and control change requirements.
Applications
The MMBTA63LT1G Darlington transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management, sensor circuits, and control systems.
- Industrial control systems: It can be used in industrial automation, motor control, and power supplies.
- Consumer electronics: Suitable for use in audio amplifiers, power supplies, and other consumer electronic devices.
- Medical devices: Can be used in medical equipment where high reliability and low noise are critical.
Q & A
- What is the collector-emitter voltage rating of the MMBTA63LT1G?
The collector-emitter voltage rating is -30 Vdc. - What is the maximum continuous collector current for the MMBTA63LT1G?
The maximum continuous collector current is -500 mAdc. - What is the thermal resistance, junction-to-ambient for the MMBTA63LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient on an FR-5 board is 556 °C/W. - Is the MMBTA63LT1G RoHS compliant?
Yes, the MMBTA63LT1G is Pb-free, halogen-free, and RoHS compliant. - What is the DC current gain (hFE) of the MMBTA63LT1G?
The DC current gain (hFE) ranges from 5,000 to 10,000 for IC = -10 mAdc and VCE = -5.0 Vdc. - What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTA63LT1G?
The collector-emitter saturation voltage (VCE(sat)) is -1.5 Vdc. - What is the base-emitter on voltage (VBE(on)) of the MMBTA63LT1G?
The base-emitter on voltage (VBE(on)) is -2.0 Vdc. - What is the current-gain - bandwidth product (fT) of the MMBTA63LT1G?
The current-gain - bandwidth product (fT) is 125 MHz. - What are the junction and storage temperature ranges for the MMBTA63LT1G?
The junction and storage temperature ranges are -55 to +150 °C. - Is the MMBTA63LT1G suitable for automotive applications?
Yes, the MMBTA63LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
