Overview
The MMBF170 is an N-Channel enhancement mode field effect transistor produced by onsemi. It is fabricated using onsemi's proprietary high cell density DMOS technology. This transistor is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications and is available in the SOT-23 package, which is Pb-free.
Key Specifications
| Parameter | Unit | Typical Value | Maximum Value |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | - | 60 |
| Drain-Gate Voltage (VDGR) | V | - | 60 |
| Gate-Source Voltage (VGSS) | V | - | ±20 |
| Continuous Drain Current (ID) | mA | - | 500 |
| Pulsed Drain Current (ID) | mA | - | 800 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 to 150 | - |
| Maximum Lead Temperature for Soldering Purposes | °C | - | 300 |
| Maximum Power Dissipation (PD) | mW | - | 300 |
| Thermal Resistance, Junction to Ambient (RθJA) | °C/W | - | 417 |
| Gate Threshold Voltage (VGS(th)) | V | 0.8 to 2.1 | 3 |
| Static Drain-Source On-Resistance (RDS(ON)) | Ω | - | 5 |
| Input Capacitance (Ciss) | pF | - | 40 |
| Output Capacitance (Coss) | pF | - | 30 |
| Reverse Transfer Capacitance (Crss) | pF | - | 10 |
| Turn-On Time (ton) | ns | - | 10 |
| Turn-Off Time (toff) | ns | - | 10 |
Key Features
- High Density Cell Design for Low RDS(ON): Minimizes on-state resistance for efficient operation.
- Voltage Controlled Small Signal Switch: Suitable for applications requiring voltage-controlled switching.
- Rugged and Reliable: Designed for robust performance in various environments.
- High Saturation Current Capability: Supports high current applications up to 500 mA DC.
- Fast Switching Speed: Ensures quick turn-on and turn-off times, enhancing overall system performance.
- Low Input/Output Leakage: Reduces power loss and improves system efficiency.
- Pb-Free Package: Compliant with environmental regulations and standards.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
- Power MOSFET Gate Drivers: Used in driving the gates of power MOSFETs in various power management circuits.
- Switching Applications: Suitable for general switching applications requiring fast and reliable performance.
- Motor Controls: Can be used in motor control circuits for efficient and reliable operation.
- Power Management Functions: Used in high-efficiency power-management applications.
Q & A
- What is the maximum drain-source voltage (VDSS) of the MMBF170?
The maximum drain-source voltage (VDSS) of the MMBF170 is 60 V.
- What is the continuous drain current (ID) rating of the MMBF170?
The continuous drain current (ID) rating of the MMBF170 is 500 mA.
- What is the typical gate threshold voltage (VGS(th)) of the MMBF170?
The typical gate threshold voltage (VGS(th)) of the MMBF170 ranges from 0.8 to 2.1 V.
- What is the maximum on-state resistance (RDS(ON)) of the MMBF170?
The maximum on-state resistance (RDS(ON)) of the MMBF170 is 5 Ω.
- What is the package type of the MMBF170?
The MMBF170 is available in the SOT-23 package.
- Is the MMBF170 Pb-free?
- What are the typical applications of the MMBF170?
The MMBF170 is typically used in small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the maximum operating temperature range of the MMBF170?
The maximum operating temperature range of the MMBF170 is from -55°C to 150°C.
- What is the turn-on time (ton) of the MMBF170?
The turn-on time (ton) of the MMBF170 is typically 10 ns.
- What is the turn-off time (toff) of the MMBF170?
The turn-off time (toff) of the MMBF170 is typically 10 ns.
