BS170-D26Z
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onsemi BS170-D26Z

Manufacturer No:
BS170-D26Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA TO92-3
Delivery:
Payment:
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Product Introduction

Overview

The BS170-D26Z is a small signal N-Channel enhancement mode field effect transistor (FET) produced by onsemi. This device is part of the BS170 series and is known for its high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. The BS170-D26Z is suitable for a wide range of low voltage, low current applications.

Key Specifications

Parameter Symbol Unit Min Typ Max
Drain-Source Voltage VDSS V - - 60
Drain-Gate Voltage VDGR V - - 60
Gate-Source Voltage VGSS V - - ±20
Continuous Drain Current ID mA - - 500
Pulsed Drain Current ID mA - - 1200
Operating and Storage Temperature Range TJ, TSTG °C -55 - 150
Maximum Lead Temperature for Soldering TL °C - - 300
Gate Threshold Voltage VGS(th) V 0.8 2.1 3
Static Drain-Source On-Resistance RDS(ON) - 1.2 5
Input Capacitance Ciss pF - 24 40
Output Capacitance Coss pF - 17 30
Reverse Transfer Capacitance Crss pF - 7 10

Key Features

  • High Density Cell Design: Minimizes on-state resistance for efficient performance.
  • Rugged and Reliable: Ensures durability and consistency in various applications.
  • High Saturation Current Capability: Supports high current requirements.
  • Voltage Controlled Small Signal Switch: Ideal for low voltage, low current switching applications.
  • Pb-Free Devices: Compliant with environmental regulations.

Applications

  • Small Servo Motor Control: Suitable for controlling small servo motors due to its low voltage and current capabilities.
  • Power MOSFET Gate Drivers: Can be used to drive the gates of power MOSFETs efficiently.
  • Switching Applications: Ideal for various switching applications requiring fast and reliable performance.
  • General Usage: Versatile enough to be used in many different low voltage, low current applications.

Q & A

  1. What is the maximum drain-source voltage of the BS170-D26Z?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating of the BS170-D26Z?

    The continuous drain current (ID) is 500 mA.

  3. What is the gate-source voltage range for the BS170-D26Z?

    The gate-source voltage (VGSS) range is ±20 V.

  4. What is the typical on-resistance of the BS170-D26Z?

    The typical static drain-source on-resistance (RDS(ON)) is 1.2 mΩ at VGS = 10 V and ID = 200 mA.

  5. What are the operating and storage temperature ranges for the BS170-D26Z?

    The operating and storage temperature range is -55°C to 150°C.

  6. Is the BS170-D26Z Pb-free?
  7. What are some common applications for the BS170-D26Z?
  8. What is the maximum lead temperature for soldering the BS170-D26Z?
  9. What is the input capacitance of the BS170-D26Z?
  10. What is the turn-on time of the BS170-D26Z?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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In Stock

$0.42
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Same Series
BS170-D27Z
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MOSFET N-CH 60V 500MA TO92-3
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BS170-D74Z
BS170-D74Z
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BS170-D26Z
BS170-D26Z
MOSFET N-CH 60V 500MA TO92-3
BS170_J35Z
BS170_J35Z
MOSFET N-CH 60V 500MA TO92-3

Similar Products

Part Number BS170-D26Z BS170-D27Z
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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