Overview
The MMBF0201NLT1G is an N-Channel MOSFET produced by onsemi, designed for use in small power management circuitry. This miniature surface mount device features a low RDS(on) to minimize power loss and conserve energy, making it ideal for applications in portable and battery-powered products. The MOSFET is packaged in a SOT-23 (TO-236) case, which saves board space and is Pb-free and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 300 | mAdc |
| Drain Current - Continuous @ TA = 70°C | ID | 240 | mAdc |
| Pulsed Drain Current (tp ≤ 10 μs) | IDM | 750 | mAdc |
| Total Power Dissipation @ TA = 25°C | PD | 225 | mW |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.4 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 0.75 to 1.4 | Ω |
Key Features
- Low RDS(on): Provides higher efficiency and extends battery life.
- Miniature SOT-23 Package: Saves board space and is suitable for compact designs.
- Pb-Free and RoHS Compliant: Ensures environmental compliance and safety.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring strict quality standards.
- High Drain Current and Voltage Ratings: Supports up to 300 mA drain current and 20 V drain-to-source voltage.
Applications
The MMBF0201NLT1G is typically used in various power management and small power circuitry applications, including:
- DC-DC converters
- Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
- Automotive and other applications requiring AEC-Q101 qualification.
Q & A
- What is the maximum drain-to-source voltage of the MMBF0201NLT1G?
The maximum drain-to-source voltage (VDSS) is 20 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 300 mA.
- What is the thermal resistance, junction-to-ambient, of this MOSFET?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.
- Is the MMBF0201NLT1G Pb-free and RoHS compliant?
- What are the typical applications of the MMBF0201NLT1G?
- What is the gate threshold voltage range of the MMBF0201NLT1G?
GS(th)) range is from 1.0 to 2.4 Vdc. - What is the maximum lead temperature for soldering purposes?
- Is the MMBF0201NLT1G AEC-Q101 qualified?
- What is the package type of the MMBF0201NLT1G?
- What is the total power dissipation at 25°C?
D) at 25°C is 225 mW.
