Overview
The MJD200T4G is a high-performance NPN bipolar power transistor manufactured by onsemi. This device is part of the MJD200 series, designed for low voltage, low power, and high-gain applications, particularly in audio amplifiers. The transistor is packaged in a DPAK (TO-252-2) case, which is suitable for surface mount applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 40 | Vdc |
| Collector-Emitter Voltage | VCEO | 25 | Vdc |
| Emitter-Base Voltage | VEB | 8.0 | Vdc |
| Collector Current - Continuous | IC | 5.0 | Adc |
| Collector Current - Peak | ICM | 10 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 12.5 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 10 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 89.3 | °C/W |
Key Features
- High DC Current Gain: The MJD200T4G offers high current gain, making it suitable for high-gain audio amplifier applications.
- Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching and amplification applications.
- High Current-Gain - Bandwidth Product: This characteristic ensures high performance in both current gain and bandwidth, making it ideal for a variety of applications.
- Annular Construction for Low Leakage: The annular construction helps in minimizing leakage currents, enhancing the overall reliability of the device.
- Pb-Free and RoHS Compliant: The device is lead-free and complies with RoHS regulations, ensuring environmental sustainability.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- Audio Amplifiers: Designed for low voltage, low power, and high-gain audio amplifier applications.
- Automotive Systems: AEC-Q101 qualified, making it suitable for various automotive applications.
- General Purpose Switching: Can be used in general-purpose switching applications due to its high current gain and low saturation voltage.
- Power Management: Useful in power management circuits where high efficiency and low power losses are critical.
Q & A
- What is the maximum collector-emitter voltage of the MJD200T4G?
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
- What is the continuous collector current rating of the MJD200T4G?
The continuous collector current (IC) is rated at 5.0 Adc.
- Is the MJD200T4G Pb-free and RoHS compliant?
- What is the thermal resistance from junction to case for the MJD200T4G?
The thermal resistance from junction to case (RJC) is 10 °C/W.
- What are the operating and storage junction temperature ranges for the MJD200T4G?
The operating and storage junction temperature range is -65 to +150 °C.
- What is the current gain of the MJD200T4G at IC = 500 mAdc and VCE = 1 Vdc?
The DC current gain (hFE) at IC = 500 mAdc and VCE = 1 Vdc is between 70 to 180.
- Is the MJD200T4G suitable for automotive applications?
- What is the collector-emitter saturation voltage at IC = 5 Adc and IB = 1 Adc?
The collector-emitter saturation voltage (VCE(sat)) at IC = 5 Adc and IB = 1 Adc is 1.8 Vdc.
- What is the base-emitter saturation voltage at IC = 5 Adc and IB = 1 Adc?
The base-emitter saturation voltage (VBE(sat)) at IC = 5 Adc and IB = 1 Adc is 2.5 Vdc.
- What is the current-gain - bandwidth product of the MJD200T4G?
The current-gain - bandwidth product (fT) is 65 MHz.
