Overview
The MJD210RLG is a PNP silicon power transistor produced by onsemi, designed for low voltage, low-power, high-gain audio amplifier applications. This transistor is part of the MJD210 series and is packaged in a DPAK (TO-252) case, which is suitable for surface mount applications. The MJD210RLG is Pb-free and RoHS compliant, making it environmentally friendly. It is also AEC-Q101 qualified and PPAP capable, which is particularly beneficial for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Base Voltage | VCB | 40 Vdc |
| Collector-Emitter Voltage | VCEO | 25 Vdc |
| Emitter-Base Voltage | VEB | 8.0 Vdc |
| Collector Current - Continuous | IC | 5.0 Adc |
| Collector Current - Peak | ICM | 10 Adc |
| Base Current | IB | 1.0 Adc |
| Total Power Dissipation @ TC = 25°C | PD | 12.5 W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 °C |
| Thermal Resistance, Junction-to-Case | RJC | 10 °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 89.3 °C/W |
Key Features
- High DC Current Gain: Ensures high amplification capabilities.
- Lead Formed for Surface Mount Applications: Suitable for surface mount applications in plastic sleeves.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss during saturation.
- High Current-Gain - Bandwidth Product: Supports high-frequency applications.
- Annular Construction for Low Leakage: Reduces leakage currents.
- Epoxy Meets UL 94 V-0 @ 0.125 in: Compliant with safety standards for flammability.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other critical applications.
Applications
The MJD210RLG is primarily designed for low voltage, low-power, high-gain audio amplifier applications. It is also suitable for various other applications including:
- Audio amplifiers
- Automotive electronics
- General-purpose amplifiers
- Switching circuits
- Other high-gain, low-power electronic circuits
Q & A
- What is the maximum collector-emitter voltage for the MJD210RLG?
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is rated at 5.0 Adc.
- Is the MJD210RLG Pb-free and RoHS compliant?
- What is the thermal resistance from junction to case for the MJD210RLG?
The thermal resistance from junction to case (RJC) is 10 °C/W.
- What are the operating and storage junction temperature ranges for this transistor?
The operating and storage junction temperature range is -65 to +150 °C.
- Is the MJD210RLG suitable for automotive applications?
- What is the high DC current gain of the MJD210RLG?
The high DC current gain (hFE) ranges from 70 to 180, depending on the collector current and collector-emitter voltage.
- What is the collector-emitter saturation voltage for the MJD210RLG?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.3 to 1.8 Vdc, depending on the collector and base currents.
- What is the base-emitter saturation voltage for the MJD210RLG?
The base-emitter saturation voltage (VBE(sat)) is approximately 2.5 Vdc.
- What is the current-gain - bandwidth product for the MJD210RLG?
The current-gain - bandwidth product (fT) is 65 MHz.
