Overview
The onsemi MJD200G is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of power and general-purpose amplifier applications. It is housed in a 3-pin DPAK (TO-252-2) surface mount package, making it suitable for space-efficient and high-reliability designs. The transistor is part of onsemi's portfolio of complementary plastic power transistors, known for their robust performance and reliability.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Base Voltage | 25 | V |
Collector-Emitter Voltage | 25 | V |
Emitter-Base Voltage | 5 | V |
Collector Current | 5 | A |
Power Dissipation | 1.4 | W |
Transition Frequency | 65 | MHz |
Package Type | DPAK (TO-252-2) | - |
Key Features
- High collector current of up to 5 A, making it suitable for high-power applications.
- Collector-emitter voltage of 25 V, providing robust performance in various voltage conditions.
- Transition frequency of 65 MHz, suitable for high-frequency applications.
- Compact DPAK (TO-252-2) package for space-efficient designs.
- Low power dissipation of 1.4 W, contributing to energy efficiency.
Applications
The onsemi MJD200G is versatile and can be used in a variety of applications, including:
- General-purpose amplifier circuits.
- Power switching and control circuits.
- Automotive systems requiring high reliability and performance.
- Industrial control and automation systems.
- Consumer electronics where high current handling is necessary.
Q & A
- What is the collector current rating of the MJD200G transistor?
The collector current rating of the MJD200G transistor is up to 5 A.
- What is the maximum collector-emitter voltage for the MJD200G?
The maximum collector-emitter voltage for the MJD200G is 25 V.
- What package type is the MJD200G transistor available in?
The MJD200G transistor is available in a 3-pin DPAK (TO-252-2) surface mount package.
- What is the transition frequency of the MJD200G transistor?
The transition frequency of the MJD200G transistor is 65 MHz.
- What is the power dissipation of the MJD200G transistor?
The power dissipation of the MJD200G transistor is 1.4 W.
- Is the MJD200G suitable for high-frequency applications?
Yes, the MJD200G is suitable for high-frequency applications due to its transition frequency of 65 MHz.
- Can the MJD200G be used in automotive systems?
Yes, the MJD200G can be used in automotive systems due to its high reliability and performance.
- What are some common applications of the MJD200G transistor?
The MJD200G transistor is commonly used in general-purpose amplifier circuits, power switching and control circuits, and industrial control systems.
- Is the MJD200G RoHS compliant?
Yes, the MJD200G is RoHS compliant.
- Where can I find detailed specifications for the MJD200G transistor?
Detailed specifications for the MJD200G transistor can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and RS Components.