MJD200G
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onsemi MJD200G

Manufacturer No:
MJD200G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 25V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi MJD200G is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of power and general-purpose amplifier applications. It is housed in a 3-pin DPAK (TO-252-2) surface mount package, making it suitable for space-efficient and high-reliability designs. The transistor is part of onsemi's portfolio of complementary plastic power transistors, known for their robust performance and reliability.

Key Specifications

Parameter Value Unit
Collector-Base Voltage 25 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current 5 A
Power Dissipation 1.4 W
Transition Frequency 65 MHz
Package Type DPAK (TO-252-2) -

Key Features

  • High collector current of up to 5 A, making it suitable for high-power applications.
  • Collector-emitter voltage of 25 V, providing robust performance in various voltage conditions.
  • Transition frequency of 65 MHz, suitable for high-frequency applications.
  • Compact DPAK (TO-252-2) package for space-efficient designs.
  • Low power dissipation of 1.4 W, contributing to energy efficiency.

Applications

The onsemi MJD200G is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Power switching and control circuits.
  • Automotive systems requiring high reliability and performance.
  • Industrial control and automation systems.
  • Consumer electronics where high current handling is necessary.

Q & A

  1. What is the collector current rating of the MJD200G transistor?

    The collector current rating of the MJD200G transistor is up to 5 A.

  2. What is the maximum collector-emitter voltage for the MJD200G?

    The maximum collector-emitter voltage for the MJD200G is 25 V.

  3. What package type is the MJD200G transistor available in?

    The MJD200G transistor is available in a 3-pin DPAK (TO-252-2) surface mount package.

  4. What is the transition frequency of the MJD200G transistor?

    The transition frequency of the MJD200G transistor is 65 MHz.

  5. What is the power dissipation of the MJD200G transistor?

    The power dissipation of the MJD200G transistor is 1.4 W.

  6. Is the MJD200G suitable for high-frequency applications?

    Yes, the MJD200G is suitable for high-frequency applications due to its transition frequency of 65 MHz.

  7. Can the MJD200G be used in automotive systems?

    Yes, the MJD200G can be used in automotive systems due to its high reliability and performance.

  8. What are some common applications of the MJD200G transistor?

    The MJD200G transistor is commonly used in general-purpose amplifier circuits, power switching and control circuits, and industrial control systems.

  9. Is the MJD200G RoHS compliant?

    Yes, the MJD200G is RoHS compliant.

  10. Where can I find detailed specifications for the MJD200G transistor?

    Detailed specifications for the MJD200G transistor can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and RS Components.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:1.4 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD200G MJD210G MJD200
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 5 A 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 1.8V @ 1A, 5A 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 45 @ 2A, 1V 45 @ 2A, 1V
Power - Max 1.4 W 1.4 W 1.4 W
Frequency - Transition 65MHz 65MHz 65MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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