Overview
The MJD210T4G is a PNP silicon power transistor produced by onsemi, designed for low voltage, low-power, high-gain audio amplifier applications. This transistor is part of the MJD210 series and is packaged in a DPAK (Dual In-Line Package) for surface mount applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Max | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 40 | Vdc |
| Collector-Emitter Voltage | VCEO | 25 | Vdc |
| Emitter-Base Voltage | VEB | 8.0 | Vdc |
| Collector Current - Continuous | IC | 5.0 | Adc |
| Collector Current - Peak | ICM | 10 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 12.5 | W |
| Total Power Dissipation @ TA = 25°C | PD | 1.4 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 10 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 89.3 | °C/W |
Key Features
- High DC Current Gain
- Lead formed for surface mount applications in plastic sleeves
- Low Collector-Emitter Saturation Voltage
- High Current-Gain - Bandwidth Product
- Annular construction for low leakage
- Epoxy meets UL 94 V-0 @ 0.125 in
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-Free and RoHS compliant
Applications
The MJD210T4G is designed for various applications, including:
- Low voltage, low-power audio amplifiers
- Automotive systems requiring high reliability and compliance with AEC-Q101 standards
- General-purpose switching and amplification in surface mount configurations
- Other high-gain applications where low leakage and high current gain are necessary
Q & A
- What is the maximum collector-emitter voltage for the MJD210T4G?
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is rated at 5.0 Adc.
- Is the MJD210T4G Pb-Free and RoHS compliant?
- What is the thermal resistance from junction to case for the MJD210T4G?
The thermal resistance from junction to case (RJC) is 10 °C/W.
- What are the operating and storage junction temperature ranges for this transistor?
The operating and storage junction temperature range is from −65 to +150 °C.
- Is the MJD210T4G suitable for automotive applications?
- What is the high current-gain - bandwidth product for the MJD210T4G?
The current-gain - bandwidth product (fT) is 65 MHz.
- What is the collector-emitter saturation voltage for the MJD210T4G?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.3 to 1.8 Vdc depending on the collector and base currents.
- How is the MJD210T4G packaged?
The MJD210T4G is packaged in a DPAK (Dual In-Line Package) for surface mount applications.
- What are the key electrical characteristics of the MJD210T4G?
